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Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics

Foreign code F110005296
File No. A242-50US1
Posted date Aug 31, 2011
Country United States of America
Application number 95597210
Gazette No. 20110068324
Gazette No. 8008650
Date of filing Nov 30, 2010
Gazette Date Mar 24, 2011
Gazette Date Aug 30, 2011
International application number JP2006302349
International publication number WO2006085611
Date of international filing Feb 10, 2006
Date of international publication Aug 17, 2006
Priority data
  • P2005-034476 (Feb 10, 2005) JP
  • 2006WO-JP302349 (Feb 10, 2006) WO
  • 2007US-11815871 (Oct 5, 2007) US
Title Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics
Abstract (US8008650)
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties.
To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
Scope of claims [claim1]
1. An n-type transistor comprising: a source electrode;
a drain electrode;
a gate electrode;
an n-type channel which has a nanotube-shaped structure and is provided between said source electrode and said drain electrode; and
a film of a nitrogenous compound which is formed directly on said channel while being heated, wherein
said channel is a channel which is converted from p-type to n-type at the time of film formation of the nitrogenous compound.
[claim2]
2. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound is formed at temperature of 500 deg. C. or higher and 1600 deg. C. or lower.
[claim3]
3. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound is formed through a thermal CVD technique.
[claim4]
4. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound has an oxygen content of 0 atomic % or more and 10 atomic % or less.
[claim5]
5. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound has a hydrogen content of 5 atomic % or more and 20 atomic % or less.
[claim6]
6. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound is formed only on a top and side of said channel.
[claim7]
7. The n-type transistor according to claim 1, wherein said nanotube-shaped structure is a carbon nanotube.
[claim8]
8. The n-type transistor according to claim 1, wherein the nitrogenous compound is silicon nitride.
[claim9]
9. The n-type transistor according to claim 1, wherein said gate electrode is a top gate which is formed on said channel through said film of the nitrogenous compound.
[claim10]
10. The n-type transistor according to claim 1, wherein said film is formed directly on said channel, said source electrode, and said drain electrode while being heated.
[claim11]
11. An n-type transistor sensor comprising: a source electrode;
a drain electrode;
a gate electrode;
an n-type channel which has a nanotube-shaped structure and is provided between said source electrode and said drain electrode; and
a film of a nitrogenous compound which is formed directly on said channel while being heated, wherein
said channel is a channel which is converted from p-type to n-type at the time of film formation of the nitrogenous compound and said sensor detects a target object to be detected as a variation of a current flowing through said channel.
[claim12]
12. The n-type transistor sensor according to claim 11, wherein said film of the nitrogenous compound is formed at temperature of 500 deg. C. or greater and 1600 deg. or lower.
[claim13]
13. The n-type transistor sensor according to claim 11, wherein said film of the nitrogenous compound is a film which is formed through a thermal CVD technique.
[claim14]
14. The n-type transistor according to claim 11, wherein said film is formed directly on said channel, said source electrode, and said drain electrode while being heated.
  • Inventor, and Inventor/Applicant
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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