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Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser

Foreign code F110005310
File No. E06002US
Posted date Aug 31, 2011
Country United States of America
Application number 16976702
Gazette No. 20030132449
Gazette No. 06806503
Date of filing Nov 5, 2002
Gazette Date Jul 17, 2003
Gazette Date Oct 19, 2004
International application number PCT/JP01/00465
International publication number WO01/56088
Date of international filing Jan 24, 2001
Date of international publication Aug 2, 2001
Priority data
  • P2000-024843 (Jan 28, 2000) JP
Title Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser
Abstract An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200 deg. C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
  • Inventor, and Inventor/Applicant
  • Hosono, Hideo; Yamato [JP]
  • Ota, Hiromichi; Kawasaki [JP]
  • Orita, Masahiro; Funabashi [JP]
  • Kawamura, Kenichi; Sagamihara [JP]
  • Sarukura, Nobuhiko; Okazaki [JP]
  • Hirano, Msahiro; Tokyo [JP]
  • Japan Science and Technology Agency, Kawagchi [JP]
IPC(International Patent Classification)
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
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