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Ultraviolet-transparent conductive film and process for producing the same

Foreign code F110005312
File No. E06004US
Posted date Aug 31, 2011
Country United States of America
Application number 31135203
Gazette No. 20030107098
Gazette No. 6897560
Date of filing Jul 9, 2001
Gazette Date Jun 12, 2003
Gazette Date May 24, 2005
International application number JP2001005928
International publication number WO2002005296
Date of international filing Jul 9, 2001
Date of international publication Jan 17, 2002
Priority data
  • P2000-209139 (Jul 10, 2000) JP
  • P2001-182643 (Jun 15, 2001) JP
  • 2001WO-JP05928 (Jul 9, 2001) WO
Title Ultraviolet-transparent conductive film and process for producing the same
Abstract (US6897560)
The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal.
The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal.
The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.
Scope of claims [claim1]
1. An ultraviolet-transparent conductive film comprising a Ga2O3 crystal formed through any one of a pulsed-laser vapor deposition method, sputtering method, CVD method and MBE method, said film having a transparency throughout the wavelength range of 240 to 800 nm, and an electric conductivity induced by an oxygen deficiency or dopant incorporated in said Ga2O3 crystal.
[claim2]
2. An ultraviolet-transparent conductive film comprising a Ga2O3 crystal formed through any one of a pulsed-laser vapor deposition method, sputtering method, CVD method and MBE method, said film having a transparency throughout the wavelength range of 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant incorporated in said Ga2O3 crystal.
[claim3]
3. The ultraviolet-transparent conductive film as defined in claim 1 or 2, wherein said dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
[claim4]
4. The ultraviolet-transparent conductive film as defined in claim 1 or 2, which has a transmittance of 4% or more at a wavelength of 248 nm.
[claim5]
5. The ultraviolet-transparent conductive film as defined in claim 1 or 2, which has a light transmittance of 15% or more at a wavelength of 248 nm.
[claim6]
6. The ultraviolet-transparent conductive film as defined in claim 1 or 2, which has a light transmittance of 30% or more at a wavelength of 248 nm.
[claim7]
7. A method of preparing an ultraviolet-transparent conductive film comprising a Ga2O3 crystal, comprising a step of forming said film through any one of a pulsed-laser vapor deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500 deg. C. and an oxygen partial pressure of 0 to 1 Pa.
[claim8]
8. A method of preparing an ultraviolet-transparent conductive film comprising a Ga2O3 crystal, said method comprising forming said film through any one of a pulsed-laser vapor deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of less than 600 deg. C. and an oxygen partial pressure of 0 to 1 Pa while adding an energy other than thermal energy to the substrate.
[claim9]
9. A method of preparing an ultraviolet-transparent conductive film comprising a Ga2O3 crystal, said method comprising forming said film through either one of a pulsed-laser vapor deposition method, spattering method, CVD method and MBE method, under the conditions with a substrate temperature of less than 600 deg. C. and an oxygen partial pressure of 0 to 1 Pa while removing undesirable surface adsorbates from the substrate.
[claim10]
10. An ultraviolet-transparent conductive film comprising a Ga2O3 crystal formed through any one of a pulsed-laser vapor deposition method, sputtering method, CVD method and MBE method, said film having a transparency in the wavelength range of 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant incorporated in said Ga2O3 crystal, which has a transmittance of 4% or more at a wavelength of 248 nm.
[claim11]
11. An ultraviolet-transparent conductive film as in claim 10, wherein said dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
  • Inventor, and Inventor/Applicant
  • OTA HIROMICHI
  • ORITA MASAHIRO
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • HOYA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
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