Top > Search of International Patents > LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film

LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film

Foreign code F110005317
File No. E06010US
Posted date Aug 31, 2011
Country United States of America
Application number 50521903
Gazette No. 20050158993
Gazette No. 7323356
Date of filing Feb 19, 2003
Gazette Date Jul 21, 2005
Gazette Date Jan 29, 2008
International application number JP2003001756
International publication number WO2003071595
Date of international filing Feb 19, 2003
Date of international publication Aug 28, 2003
Priority data
  • P2002-045417 (Feb 21, 2002) JP
  • P2002-197744 (Jul 5, 2002) JP
  • 2003WO-JP01756 (Feb 19, 2003) WO
Title LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
Abstract (US7323356)
Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.
While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.
Scope of claims [claim1]
1. A method of producing an LnCuOX single-crystal thin film, wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te, said method comprising the steps of: growing a base thin film on a single-crystal substrate;
depositing an amorphous or polycrystalline LnCuOX thin film on said base thin film to form a laminated film;enclosing said laminated film in a closed vacuum environment, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
[claim2]
2. The method as defined in claim 1, wherein said base thin film is made of either one material selected from the group consisting of Cu, Cu2S, CuS, Cu2O, CuO, CuCl, CuCl2, CuI, Ag, Ag2S, Ag2O, AgO, AgCl, AgI and Au.
[claim3]
3. The method as defined in claim 1, wherein said single-crystal substrate is made of either one material selected from the group consisting of YSZ, Y2O3, STO, Al2O3 and MgO.
[claim4]
4. The method as defined in claim 1, wherein said base thin film is a Cu thin film, and said single-crystal substrate is made of either one material selected from the group consisting of YSZ, Y2O3 and MgO, wherein said Cu thin film is grown on a (100) plane of said single-crystal substrate.
[claim5]
5. The method as defined in claim 1, wherein said annealing step is performed in an atmosphere containing LnCuOX vapor.
[claim6]
6. The method as defined in claim 1, which includes the step of covering the surface of said deposited amorphous or polycrystalline LnCuOX thin film by an YSZ single-crystal plate in advance of said enclosing step.
[claim7]
7. The method as defined in claim 1, which includes the steps of: preparing an additional laminated film composed of said amorphous or polycrystalline LnCuOX thin film, said base thin film and said single-crystal substrate, or composed of said amorphous or polycrystalline LnCuOX thin film and said single-crystal substrate;
and
attaching the respective surfaces of said additional laminated film and said laminated film formed in said depositing step together in advance of said enclosing step.
[claim8]
8. A method of producing an Ln1-yMyCuOX single-crystal thin film, wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, 0<y<1, and M is at least one selected from the group consisting of Mg, Ca, Sr, Ba and Zn and X is at least one selected from the group consisting of S, Se and Te, said method comprising the steps of: growing a base thin film on a single-crystal substrate;
depositing an amorphous or polycrystalline Ln1-yMyCuOX thin film on said base thin film to form a laminated film;enclosing said laminated film in a closed vacuum environment, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
[claim9]
9. A method of producing a single-crystal LnCuOX1-xX'x or Ln1-yMyCuOX1-xX'x solid-solution thin film, wherein 0<y<1, 0<x<1;
Ln is at least one selected from the group consisting of lanthanide elements and yttrium;
M is at least one selected from the group consisting of Mg, Ca, Sr, Ba and Zn and each of X and X' is at least one selected from the group consisting of S, Se and Te, wherein X and X' are different elements, said method comprising the steps of: preparing a substrate consisting of the LnCuOX single-crystal thin film or the Ln1-yMyCuOX single-crystal thin film;depositing an LnCuOX1-xX'x or Ln1-yMyCuOX1-xX'x thin film on said substrate to form a laminated film;enclosing said laminated film in a vacuum chamber, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
[claim10]
10. A method of producing an LnCuOX1-xX'x single-crystal solid solution thin film, wherein 0<x<1, Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X and X' is at least one selected from the group consisting of S, Se and Te, wherein X and X' are different elements, said method comprising the steps of: growing a base thin film on a single-crystal substrate;depositing an amorphous or polycrystalline LnCuOX1-xX'x solid solution thin film on said base thin film to form a laminated film;enclosing said laminated film in a closed vacuum environment, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
  • Inventor, and Inventor/Applicant
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OTA HIROMICHI
  • ORITA MASAHIRO
  • HIRAMATSU HIDENORI
  • UEDA KAZUSHIGE
  • HOYA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close