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Technique for the growth of planar semi-polar gallium nitride 実績あり

外国特許コード F110005325
整理番号 E06712US2
掲載日 2011年8月31日
出願国 アメリカ合衆国
出願番号 62148207
公報番号 20070111531
公報番号 7704331
出願日 平成19年1月9日(2007.1.9)
公報発行日 平成19年5月17日(2007.5.17)
公報発行日 平成22年4月27日(2010.4.27)
優先権データ
  • 2005US-60660283 (2005.3.10) US
  • 2006US-11372914 (2006.3.10) US
発明の名称 (英語) Technique for the growth of planar semi-polar gallium nitride 実績あり
発明の概要(英語) (US7704331)
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.
The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
特許請求の範囲(英語) [claim1]
1. A method for growing a nitride film, comprising growing a semi-polar nitride film on a substrate.
[claim2]
4. A semi-polar nitride film grown on a substrate.
[claim3]
2. The method of claim 1, wherein the semi-polar nitride film is grown parallel to the substrate's surface.
[claim4]
3. The method of claim 2, wherein the substrate is a miscut substrate.
[claim5]
5. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is a planar, semi-polar nitride film.
[claim6]
6. The semi-polar nitride film of claim 5, wherein the planar, semi-polar nitride film is grown parallel to the substrate's surface.
[claim7]
7. The semi-polar nitride film of claim 6, wherein the substrate is a miscut substrate.
[claim8]
8. The method of claim 1, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.
[claim9]
9. The method of claim 1, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim10]
10. The method of claim 1, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim11]
11. The method of claim 1, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim12]
12. The method of claim 1, wherein the semi-polar nitride film is a planar semi-polar nitride film.
[claim13]
13. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.
[claim14]
14. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim15]
15. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim16]
16. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim17]
17. The method of claim 3, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.
[claim18]
18. The method of claim 3, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
[claim19]
19. The method of claim 18, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim20]
20. The method of claim 3, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim21]
21. The method of claim 3, wherein the substrate is a {100} substrate miscut in specific directions.
[claim22]
22. The method of claim 21, wherein the specific directions comprise <001>, <010> or <011>.
[claim23]
23. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers.
[claim24]
24. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.
[claim25]
25. The semi-polar nitride film of claim 6, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
[claim26]
26. The semi-polar nitride film of claim 25, wherein the planar, semi-polar nitrid film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim27]
27. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim28]
28. The semi-polar nitride film of claim 6, wherein the substrate is a {100} substrate miscut in specific directions.
[claim29]
29. The semi-polar nitride film of claim 28, wherein the specific directions comprise <001>, <010> or <011>.
[claim30]
30. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers.
  • 発明者/出願人(英語)
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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