Technique for the growth of planar semi-polar gallium nitride
| Foreign code | F110005325 |
|---|---|
| File No. | E06712US2 |
| Posted date | Aug 31, 2011 |
| Country | United States of America |
| Application number | 62148207 |
| Gazette No. | 20070111531 |
| Gazette No. | 7704331 |
| Date of filing | Jan 9, 2007 |
| Gazette Date | May 17, 2007 |
| Gazette Date | Apr 27, 2010 |
| Priority data |
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| Title |
Technique for the growth of planar semi-polar gallium nitride
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| Abstract |
(US7704331) A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate. |
| Scope of claims |
[claim1] 1. A method for growing a nitride film, comprising growing a semi-polar nitride film on a substrate. [claim2] 4. A semi-polar nitride film grown on a substrate. [claim3] 2. The method of claim 1, wherein the semi-polar nitride film is grown parallel to the substrate's surface. [claim4] 3. The method of claim 2, wherein the substrate is a miscut substrate. [claim5] 5. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is a planar, semi-polar nitride film. [claim6] 6. The semi-polar nitride film of claim 5, wherein the planar, semi-polar nitride film is grown parallel to the substrate's surface. [claim7] 7. The semi-polar nitride film of claim 6, wherein the substrate is a miscut substrate. [claim8] 8. The method of claim 1, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate. [claim9] 9. The method of claim 1, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate. [claim10] 10. The method of claim 1, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate. [claim11] 11. The method of claim 1, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate. [claim12] 12. The method of claim 1, wherein the semi-polar nitride film is a planar semi-polar nitride film. [claim13] 13. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate. [claim14] 14. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate. [claim15] 15. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate. [claim16] 16. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate. [claim17] 17. The method of claim 3, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film. [claim18] 18. The method of claim 3, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). [claim19] 19. The method of claim 18, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE). [claim20] 20. The method of claim 3, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE). [claim21] 21. The method of claim 3, wherein the substrate is a {100} substrate miscut in specific directions. [claim22] 22. The method of claim 21, wherein the specific directions comprise <001>, <010> or <011>. [claim23] 23. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers. [claim24] 24. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film. [claim25] 25. The semi-polar nitride film of claim 6, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). [claim26] 26. The semi-polar nitride film of claim 25, wherein the planar, semi-polar nitrid film is grown on the substrate by hydride vapor phase epitaxy (HVPE). [claim27] 27. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE). [claim28] 28. The semi-polar nitride film of claim 6, wherein the substrate is a {100} substrate miscut in specific directions. [claim29] 29. The semi-polar nitride film of claim 28, wherein the specific directions comprise <001>, <010> or <011>. [claim30] 30. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers. |
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| IPC(International Patent Classification) |
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| Reference ( R and D project ) | ERATO NAKAMURA Inhomogeneous Crystal AREA |
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