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Technique for the growth of planar semi-polar gallium nitride achieved

Foreign code F110005325
File No. E06712US2
Posted date Aug 31, 2011
Country United States of America
Application number 62148207
Gazette No. 20070111531
Gazette No. 7704331
Date of filing Jan 9, 2007
Gazette Date May 17, 2007
Gazette Date Apr 27, 2010
Priority data
  • 2005US-60660283 (Mar 10, 2005) US
  • 2006US-11372914 (Mar 10, 2006) US
Title Technique for the growth of planar semi-polar gallium nitride achieved
Abstract (US7704331)
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.
The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
Scope of claims [claim1]
1. A method for growing a nitride film, comprising growing a semi-polar nitride film on a substrate.
[claim2]
4. A semi-polar nitride film grown on a substrate.
[claim3]
2. The method of claim 1, wherein the semi-polar nitride film is grown parallel to the substrate's surface.
[claim4]
3. The method of claim 2, wherein the substrate is a miscut substrate.
[claim5]
5. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is a planar, semi-polar nitride film.
[claim6]
6. The semi-polar nitride film of claim 5, wherein the planar, semi-polar nitride film is grown parallel to the substrate's surface.
[claim7]
7. The semi-polar nitride film of claim 6, wherein the substrate is a miscut substrate.
[claim8]
8. The method of claim 1, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.
[claim9]
9. The method of claim 1, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim10]
10. The method of claim 1, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim11]
11. The method of claim 1, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim12]
12. The method of claim 1, wherein the semi-polar nitride film is a planar semi-polar nitride film.
[claim13]
13. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is grown on a semi-polar plane of the substrate.
[claim14]
14. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-13} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim15]
15. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {10-11} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim16]
16. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is {11-22} gallium nitride (GaN) and the substrate is a semi-polar substrate.
[claim17]
17. The method of claim 3, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.
[claim18]
18. The method of claim 3, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
[claim19]
19. The method of claim 18, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim20]
20. The method of claim 3, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim21]
21. The method of claim 3, wherein the substrate is a {100} substrate miscut in specific directions.
[claim22]
22. The method of claim 21, wherein the specific directions comprise <001>, <010> or <011>.
[claim23]
23. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers.
[claim24]
24. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is a {20-21} or {10-14} nitride film.
[claim25]
25. The semi-polar nitride film of claim 6, wherein device layers are grown on the planar, semipolar nitride film by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
[claim26]
26. The semi-polar nitride film of claim 25, wherein the planar, semi-polar nitrid film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim27]
27. The semi-polar nitride film of claim 6, wherein the planar, semi-polar nitride film is grown on the substrate by hydride vapor phase epitaxy (HVPE).
[claim28]
28. The semi-polar nitride film of claim 6, wherein the substrate is a {100} substrate miscut in specific directions.
[claim29]
29. The semi-polar nitride film of claim 28, wherein the specific directions comprise <001>, <010> or <011>.
[claim30]
30. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is comprised of a plurality of nitride layers.
  • Inventor, and Inventor/Applicant
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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