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Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 実績あり

外国特許コード F110005326
整理番号 E06718US2
掲載日 2011年8月31日
出願国 アメリカ合衆国
出願番号 62147907
公報番号 20070111488
公報番号 7504274
出願日 平成19年1月9日(2007.1.9)
公報発行日 平成19年5月17日(2007.5.17)
公報発行日 平成21年3月17日(2009.3.17)
優先権データ
  • 2004US-60569749 (2004.5.10) US
  • 2005US-11123805 (2005.5.6) US
発明の名称 (英語) Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 実績あり
発明の概要(英語) (US7504274)
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD).
The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
特許請求の範囲(英語) [claim1]
1. A method of fabricating nonpolar Indium-containing III-nitride devices, comprising:
(a) providing a III-nitride substrate or template;(b) growing one or more nonpolar Indium-containing III-nitride layers on the substrate or template;(c) growing a capping layer on the nonpolar Indium-containing III-nitride layers;
and(d) growing one or more nonpolar Aluminum-containing or Gallium-containing III-nitride layers on the capping layer.
[claim2]
5. At least one Indium containing III-nitride epitaxial layer, heterostructure or device grown on a nonpolar nitride template or substrate with a threading dislocation density of less than 1 * 109 cm-2 and a stacking fault of less than 1 * 104 cm-1.
[claim3]
2. A nonpolar Indium-containing III-nitride based device, comprising:
(a) a III-nitride substrate or template;(b) one or more nonpolar Indium-containing III-nitride layers on the substrate or template(c) a capping layer on the nonpolar Indium-containing III-nitride layers;
and(d) one or more nonpolar Aluminum-containing or Gallium-containing III-nitride layers on the capping layer.
[claim4]
3. The method of claim 1, wherein the III-nitride substrate or template has a dislocation density of less than 1 * 109 cm-2 and a stacking fault density of less than 1 * 104 cm-1.
[claim5]
4. The device of claim 2, wherein the III-nitride substrate or template has a dislocation density of less than 1 * 109 cm-2 and a stacking fault density of less than 1 * 104 cm-1.
[claim6]
6. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the nonpolar nitride template or substrate has a threading dislocation density of less than 5 * 106 cm-2 and a stacking fault of less than 3 * 103 cm-1.
[claim7]
7. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the Indium containing III-nitride epitaxial layer, heterostructure or device is grown using N2 carrier gas.
[claim8]
8. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the Indium containing III-nitride epitaxial layer, heterostructure or device is grown near or at atmospheric pressure.
[claim9]
9. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the nonpolar nitride template or substrate is a GaN, AlN or AlGaN substrate.
[claim10]
10. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the layer is an InGaN layer.
[claim11]
11. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the device is a light emitting diode, laser diode or transistor.
[claim12]
12. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the device is a light emitting diode (LED) or laser diode (LD) with an emission wavelength between 360 nm and 600 nm.
  • 発明者/出願人(英語)
  • CHAKRABORTY ARPAN
  • HASKELL BENJAMIN A
  • KELLER STACIA
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • MISHRA UMESH K
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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