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Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition achieved

Foreign code F110005326
File No. E06718US2
Posted date Aug 31, 2011
Country United States of America
Application number 62147907
Gazette No. 20070111488
Gazette No. 7504274
Date of filing Jan 9, 2007
Gazette Date May 17, 2007
Gazette Date Mar 17, 2009
Priority data
  • 2004US-60569749 (May 10, 2004) US
  • 2005US-11123805 (May 6, 2005) US
Title Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition achieved
Abstract (US7504274)
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD).
The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
Scope of claims [claim1]
1. A method of fabricating nonpolar Indium-containing III-nitride devices, comprising:
(a) providing a III-nitride substrate or template;(b) growing one or more nonpolar Indium-containing III-nitride layers on the substrate or template;(c) growing a capping layer on the nonpolar Indium-containing III-nitride layers;
and(d) growing one or more nonpolar Aluminum-containing or Gallium-containing III-nitride layers on the capping layer.
[claim2]
5. At least one Indium containing III-nitride epitaxial layer, heterostructure or device grown on a nonpolar nitride template or substrate with a threading dislocation density of less than 1 * 109 cm-2 and a stacking fault of less than 1 * 104 cm-1.
[claim3]
2. A nonpolar Indium-containing III-nitride based device, comprising:
(a) a III-nitride substrate or template;(b) one or more nonpolar Indium-containing III-nitride layers on the substrate or template(c) a capping layer on the nonpolar Indium-containing III-nitride layers;
and(d) one or more nonpolar Aluminum-containing or Gallium-containing III-nitride layers on the capping layer.
[claim4]
3. The method of claim 1, wherein the III-nitride substrate or template has a dislocation density of less than 1 * 109 cm-2 and a stacking fault density of less than 1 * 104 cm-1.
[claim5]
4. The device of claim 2, wherein the III-nitride substrate or template has a dislocation density of less than 1 * 109 cm-2 and a stacking fault density of less than 1 * 104 cm-1.
[claim6]
6. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the nonpolar nitride template or substrate has a threading dislocation density of less than 5 * 106 cm-2 and a stacking fault of less than 3 * 103 cm-1.
[claim7]
7. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the Indium containing III-nitride epitaxial layer, heterostructure or device is grown using N2 carrier gas.
[claim8]
8. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the Indium containing III-nitride epitaxial layer, heterostructure or device is grown near or at atmospheric pressure.
[claim9]
9. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the nonpolar nitride template or substrate is a GaN, AlN or AlGaN substrate.
[claim10]
10. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the layer is an InGaN layer.
[claim11]
11. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the device is a light emitting diode, laser diode or transistor.
[claim12]
12. The Indium containing III-nitride epitaxial layer, heterostructure or device of claim 5, wherein the device is a light emitting diode (LED) or laser diode (LD) with an emission wavelength between 360 nm and 600 nm.
  • Inventor, and Inventor/Applicant
  • CHAKRABORTY ARPAN
  • HASKELL BENJAMIN A
  • KELLER STACIA
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • MISHRA UMESH K
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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