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Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors

外国特許コード F110005378
整理番号 K02003US4
掲載日 2011年9月5日
出願国 アメリカ合衆国
出願番号 92345010
公報番号 20110031545
公報番号 8026563
出願日 平成22年9月22日(2010.9.22)
公報発行日 平成23年2月10日(2011.2.10)
公報発行日 平成23年9月27日(2011.9.27)
国際出願番号 JP2003009438
国際公開番号 WO2004012272
国際出願日 平成15年7月25日(2003.7.25)
国際公開日 平成16年2月5日(2004.2.5)
優先権データ
  • 特願2002-217336 (2002.7.25) JP
  • 特願2003-086145 (2003.3.26) JP
  • 2003WO-JP09438 (2003.7.25) WO
  • 2005US-10522241 (2005.10.5) US
  • 2007US-11979220 (2007.10.31) US
発明の名称 (英語) Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
発明の概要(英語) (US8026563)
A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers.
It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin.
A memory element is also provided that comprises such a spin transistor.
特許請求の範囲(英語) [claim1]
1. A transistor, comprising: a tunnel junction structure and a gate electrode, wherein said tunnel junction structure comprises:
a tunnel barrier formed of a ferromagnetic material; a source formed of a ferromagnetic material; and
a drain formed of a nonmagnetic material or a ferromagnetic material, said tunnel barrier being disposed between said source and said drain, the source being joined to one end surface of said tunnel barrier, and the drain being joined to the other end surface of said tunnel barrier,
wherein said gate electrode is formed over said tunnel barrier and applies an electric field to the tunnel barrier;
the tunnel barrier has a thickness so that Fowler Nordheim tunneling from the drain to the source does not occur in the case that said gate electrode does not apply the electric field to the tunnel barrier and occurs in the case that said gate electrode applies the electric field to the tunnel barrier.
[claim2]
2. The transistor according to claim 1, wherein the ferromagnetic material used in said source or said drain is a ferromagnetic metal or a ferromagnetic semiconductor.
[claim3]
3. The transistor according to claim 1, wherein a thickness of said tunnel barrier is set to be such that a tunnel current can take place from said source to said drain with application of a voltage to said gate electrode.
[claim4]
4. The transistor according to claim 1, wherein a magnitude of mutual conductance or an output current is controlled by relative magnetization directions of said source and said tunnel barrier.
[claim5]
5. A memory element, comprising: a tunnel junction structure and a gate electrode, wherein
said tunnel junction structure comprises:
a tunnel barrier formed by a ferromagnetic material;
a source formed by a ferromagnetic material; and
a drain formed by a nonmagnetic material or a ferromagnetic material, said tunnel barrier being disposed between said source and said drain, the source being joined to one end surface of said tunnel barrier, and the drain being joined to the other end surface of said tunnel barrier,
wherein said gate electrode is formed over said tunnel barrier,
wherein a magnitude of mutual conductance or an output current is controlled by relative magnetization directions of said source and said tunnel barrier,
wherein the transistor further comprises a spin injector for injecting spin-polarized hot carriers by a spin filter effect; and a spin analyzer for selecting the thus spin-polarized hot earners by the spin-filter effect,
wherein at least one of said spin injector and said spin analyzer comprises a barrier layer formed of a ferromagnetic material, a free layer having a ferromagnetic material in which a direction of magnetization is independently controlled, and a pin layer having a ferromagnetic material in which a direction of magnetization is not changed, and
wherein said free layer and said pin layer have a first state and a second state, a first state being a state in which said free layer and said pin layer have the same magnetization direction, and a second state being a state in which said free layer and said pin layer have different directions of magnetization.
  • 発明者/出願人(英語)
  • SUGAHARA SATOSHI
  • TANAKA MASAAKI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • G11C011/15
  • G11C011/16
  • H01L029/66S
  • T01L029/73
  • T01L029/778
  • T01L029/78
  • T01L043/08
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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