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Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element

外国特許コード F110005391
整理番号 K02016WO
掲載日 2011年9月5日
出願国 アメリカ合衆国
出願番号 88608306
公報番号 20080150643
公報番号 7764136
出願日 平成18年3月17日(2006.3.17)
公報発行日 平成20年6月26日(2008.6.26)
公報発行日 平成22年7月27日(2010.7.27)
国際出願番号 JP2006305379
国際公開番号 WO2006101040
国際出願日 平成18年3月17日(2006.3.17)
国際公開日 平成18年9月28日(2006.9.28)
優先権データ
  • 特願2005-080043 (2005.3.18) JP
  • 特願2006-069533 (2006.3.14) JP
  • 2006WO-JP305379 (2006.3.17) WO
発明の名称 (英語) Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element
発明の概要(英語) (US7764136)
A strip line integrated microwave generating element and a microwave detecting element comprises a signal electrode and a ground electrode.
The element has a magnetic tunnel junction structure which includes a magnetization fixed layer, a MgO tunnel barrier layer, and a magnetization free layer.
The magnetization free layer is 200 nm square or smaller in a cross-sectional area.
The magnetization fixed layer is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other.
The element is smaller than the electrodes and mounted on a part of the signal electrode or the ground electrode.
A MR ratio of the element is of 100% or more.
A resistance value of the element is from 50&OHgr; to 300&OHgr;.
The resistance of the element is matched with an impedance of the microwave transmission line.
特許請求の範囲(英語) [claim1]
1. A strip line integrated microwave generating element comprising: (1) a strip line having a signal electrode and a ground electrode, and
(2) the microwave generating element having a magnetic tunnel junction structure which comprises a magnetization fixed layer formed of a ferromagnetic material; a MgO tunnel barrier layer; and a magnetization free layer formed of a ferromagnetic material,
the microwave generating element being smaller than the electrodes and being mounted on a part of the signal electrode or the ground electrode,
the magnetization fixed layer of the microwave generating element being in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other,
MR ratio of the microwave generating element being of 100% or more,
a resistance value of the microwave generating element being from 50OMEGA to 300OMEGA ,
the resistance of the microwave generating element matching with an impedance of the strip line, and
a size of the microwave generating element being such that the magnetization free layer can form a single magnetic domain and being 200 nm square or smaller in cross-sectional area in a layer plan direction.
[claim2]
2. The strip line integrated microwave detecting element according to claim 1, wherein the MgO layer is formed of a polycrystal MgOx(0<x<1) having preferential orientation in the (001) crystal plane.
[claim3]
3. A microwave detecting element having a magnetic tunnel junction structure which comprises: a magnetization fixed layer formed of a ferromagnetic material;
a tunnel barrier layer; and
a magnetization free layer formed of a ferromagnetic material,
wherein a magnetization vector of the magnetization free layer or that of the magnetization fixed layer has a component perpendicular to a plane parallel to the magnetization free layer or the magnetization fixed layer, respectively, so that a detectable frequency of the microwave becomes low.
[claim4]
4. A microwave transmission line integrated microwave detecting element comprising: (1) a microwave transmission line having a signal electrode and a ground electrode, and
(2) the microwave detecting element having a magnetic tunnel junction structure which comprises a magnetization fixed layer formed of a ferromagnetic material; a tunnel barrier layer; and a magnetization free layer formed of a ferromagnetic material,
wherein the microwave detecting element is smaller than the electrodes and is mounted on a part of the signal electrode or the ground electrode, and
the magnetization fixed layer of the microwave detecting element is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the microwave detecting element is in contact with the other.
[claim5]
5. The microwave transmission line integrated microwave detecting element according to claim 4, wherein the microwave detecting element is smaller than the electrodes so that a ratio of change in impedance of the microwave transmission line after an installation of the microwave detecting element to the impedance before the installation thereof is one-thousandth or less.
[claim6]
6. The microwave transmission line integrated microwave detecting element according to claim 4, wherein the microwave transmission line is a strip line.
[claim7]
7. The microwave transmission line integrated microwave detecting element according to claim 4, wherein the electrode in contact with the magnetization free layer of the microwave detecting element comprises a nonmagnetic material.
  • 発明者/出願人(英語)
  • SUZUKI YOSHISHIGE
  • YUASA SHINJI
  • FUKUSHIMA AKIO
  • TULAPURKAR ASHWIN
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • H01L043/08
  • H01P011/00B2
  • H01Q023/00
  • H03B015/00B
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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