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Solar cell and method of producing the same 新技術説明会

外国特許コード F110005404
整理番号 K02803US
掲載日 2011年9月5日
出願国 アメリカ合衆国
出願番号 21965408
公報番号 20090044862
公報番号 7999178
出願日 平成20年7月25日(2008.7.25)
公報発行日 平成21年2月19日(2009.2.19)
公報発行日 平成23年8月16日(2011.8.16)
優先権データ
  • 特願2006-217948 (2006.8.10) JP
  • 特願2007-208729 (2007.8.10) JP
発明の名称 (英語) Solar cell and method of producing the same 新技術説明会
発明の概要(英語) (US7999178)
A solar cell comprises a substrate; an n-type barium silicide layer being arranged on the substrate and containing Ba atoms and Si atoms; an n+-type barium silicide layer being arranged on the n-type barium silicide layer and containing impurity atoms which are at least one of atoms belonging to Groups 13 to 15 of the periodic table, Ba atoms, and Si atoms; an upper electrode arranged on the n+-type barium silicide layer; and a lower electrode arranged on the substrate.
特許請求の範囲(英語) [claim1]
1. A solar cell, comprising: a substrate;
an n-type barium silicide layer arranged on the substrate, and containing Ba atoms and Si atoms; an n+-type barium silicide layer arranged on the n-type barium silicide layer, and containing Ba atoms, Si atoms, and impurity atoms which are at least one of Sb atoms and Ga atoms;
an upper electrode arranged on the n+-type barium silicide layer; and
a lower electrode arranged on the substrate.
[claim2]
2. The solar cell according to claim 1, further comprising a metal silicide layer between the n-type barium silicide layer and the substrate, said metal silicide layer containing metal atoms which are at least one of atoms belonging to Groups 9 and 10 of the periodic table and Si atoms.
[claim3]
3. The solar cell according to claim 2, wherein the lower electrode is arranged on a surface of the metal silicide layer.
[claim4]
4. The solar cell according to claim 2, wherein the metal silicide layer is any one of a cobalt silicide layer containing Co atoms and Si atoms, and a nickel silicide layer containing Ni atoms and Si atoms.
[claim5]
5. The solar cell according to claim 1, wherein at least one of the n-type barium silicide layer and the n+-type barium silicide layer further contain alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom, and Mg atom.
[claim6]
6. The solar cell according to claim 1, wherein the n-type barium silicide layer is any one of an epitaxial layer and a highly oriented layer.
[claim7]
7. The solar cell according to claim 1, wherein the thickness of the n-type barium silicide layer is in a range from 0.2 mu m to 1.0 mu m, and the thickness of the n+-type barium silicide layer is in a range from 0.01 mu m to 0.1 mu m.
[claim8]
8. A method for producing a solar cell, comprising the steps of: forming an n-type barium silicide layer by allowing Si atoms and Ba atoms to react with each other on a substrate;
forming an n+-type barium silicide layer on a surface of the n-type barium silicide layer by allowing Ba atoms, Si atoms, and impurity atoms which are at least one of Sb atoms and Ga atoms to react with each other;
forming a lower electrode on the substrate; and
forming an upper electrode on a surface of the n+-type barium silicide layer.
[claim9]
9. The method for producing a solar cell according to claim 8, wherein at least one surface of the substrate is formed by Si, and, in the step of forming the n-type barium silicide layer, by introducing the Ba atoms into the Si surface of the substrate, the Si atoms and the Ba atoms are allowed to react with each other to form an n-type barium silicide ultrathin layer, and then Ba atoms and Si atoms are further allowed to react with each other on the n-type barium silicide ultrathin layer to form the n-type barium silicide layer.
[claim10]
10. The method for producing a solar cell according to claim 8, wherein, in the step of forming the n-type barium silicide layer, alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom, and Mg atom is additionally allowed to react.
[claim11]
11. The method for producing a solar cell according to claim 8, wherein, in the step of forming the n+-type barium silicide layer, alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom, and Mg atom is are additionally allowed to react.
[claim12]
12. The method for producing a solar cell according to claim 8, wherein the n-type barium silicide layer is formed by an epitaxy method.
[claim13]
13. The method for producing a solar cell according to claim 8, wherein the thickness of the n-type barium silicide layer is in a range from 0.2 mu m to 1.0 mu m, and the thickness of the n+-type barium silicide layer is in a range from 0.01 mu m to 0.1 mu m.
[claim14]
14. A method for producing a solar cell, comprising the steps of: forming a metal silicide layer by allowing Si atoms and metal atoms belonging to Groups 9 and 10 of the periodic table to react with each other on a substrate;
forming an n-type barium silicide layer by allowing Ba atoms and Si atoms to react with each other on the metal silicide layer;
forming an n+-type barium silicide layer on a surface of the n-type barium silicide layer by allowing Ba atoms, Si atoms, and impurity atoms which are at least one of Sb atoms and Ga atoms, to react with each other;
forming a lower electrode on at least one of the metal silicide layer and the substrate; and forming an upper electrode on a surface of the n+-type silicide layer.
[claim15]
15. The method for producing a solar cell according to claim 14, wherein, in the step of forming the n-type barium silicide layer, a Si ultrathin layer is formed on a surface of the metal silicide layer, and then the Ba atoms are introduced into the Si ultrathin layer to allow the Ba atoms and the Si atoms to react with each other.
[claim16]
16. The method for producing a solar cell according to claim 15, wherein, in the step of forming the n-type barium silicide layer, by introducing the Ba atoms into the Si ultrathin layer, the Si atoms and the Ba atoms are allowed to react with each other to form an n-type barium silicide ultrathin layer, and then Ba atoms and Si atoms are further allowed to react with each other on the n-type barium silicide ultrathin layer to form the n-type barium silicide layer.
[claim17]
17. The method for producing a solar cell according to claim 14, wherein, in the step of forming the n-type barium silicide layer, alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom, and Mg atom is additionally allowed to react.
[claim18]
18. The method for producing a solar cell according to claim 14, wherein, in the step of forming the n+-type barium silicide layer, alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom, and Mg atom is additionally allowed to react.
[claim19]
19. The method for producing a solar cell according to claim 14, wherein the n-type barium silicide layer is formed by an epitaxy method.
[claim20]
20. The method for producing a solar cell according to claim 14, wherein the thickness of the n-type barium silicide layer is in a range from 0.2 mu m to 1.0 mu m, and the thickness of the n+-type barium silicide layer is in a range from 0.01 mu m to 0.1 mu m.
[claim21]
21. The solar cell according to claim 1, wherein the n+-type barium silicide layer has an electron density of 5 * 1019 cm-3 or above.
[claim22]
22. The method for producing a solar cell according to claim 8, wherein the n+-type barium silicide layer has an electron density of 5 * 1019 cm-3 or above.
[claim23]
23. The method for producing a solar cell according to claim 14, wherein the n+-type barium silicide layer has an electron density of 5 * 1019 cm-3 or above.
  • 発明者/出願人(英語)
  • SUEMASU TAKASHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • H01L021/02K4A1A3
  • H01L021/02K4A1L
  • H01L021/02K4C1
  • H01L021/02K4C3C1
  • H01L021/02K4E3P
  • H01L031/032
  • H01L031/072
  • H01L031/18
参考情報 (研究プロジェクト等) PRESTO Structures and control of interfaces AREA
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