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Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device

外国特許コード F110005406
整理番号 K02805WO
掲載日 2011年9月5日
出願国 アメリカ合衆国
出願番号 45842009
公報番号 20100051913
公報番号 8203138
出願日 平成21年7月10日(2009.7.10)
公報発行日 平成22年3月4日(2010.3.4)
公報発行日 平成24年6月19日(2012.6.19)
優先権データ
  • 特願2008-004629 (2008.1.11) JP
  • 特願2008-004630 (2008.1.11) JP
  • 2008WO-JP65700 (2008.9.1) WO
発明の名称 (英語) Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device
発明の概要(英語) (US8203138)
An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer.
The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid.
Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher.
As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
特許請求の範囲(英語) [claim1]
1. A field-effect transistor comprising: a source electrode and a drain electrode;
an organic semiconductor layer in contact with the source electrode and the drain electrode;
a gate insulating layer adjacent to the organic semiconductor layer; and
a gate electrode in contact with the gate insulating layer, wherein:
the gate insulating layer is in a liquid state with a viscosity that is equal to 150 mPas (millipascals per second) or less at room temperature and is constituted of an ionic liquid as a sole or main component thereof.
[claim2]
2. The field-effect transistor according to claim 1, wherein: the gate electrode is separated from the organic semiconductor layer over a specific gap which is determined such that capillary force can be achieved.
[claim3]
3. The field-effect transistor according to claim 2, wherein: the ionic liquid is held within closed space formed at the field-effect transistor.
[claim4]
4. The field-effect transistor according to claim 1, wherein: the ionic liquid is held in the field-effect transistor by capillary force.
[claim5]
5. The field-effect transistor according to claim 1, wherein: the ionic liquid is held within closed space formed at the field-effect transistor.
[claim6]
6. The field-effect transistor according to claim 1, wherein: a capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz or higher.
[claim7]
7. The field-effect transistor according to claim 6, wherein: the ionic liquid is free of glue and thickener.
[claim8]
8. The field-effect transistor according to claim 7, wherein: the organic semiconductor is either a rubrene or a pentacene.
[claim9]
9. The field-effect transistor according to claim 1, wherein: the organic semiconductor is either a rubrene or a pentacene.
[claim10]
10. The field-effect transistor according to claim 1, wherein: the ionic liquid is free of glue and thickener.
[claim11]
11. The field-effect transistor according to claim 1, wherein: the ionic liquid contains nano particles of an inorganic oxide.
[claim12]
12. The field-effect transistor according to claim 1, wherein: the gate insulating layer in the liquid state contains inorganic ions.
[claim13]
13. The field-effect transistor according to claim 1, wherein: a cation constituting the ionic liquid is selected from
imidazolium cations, pyrrolidinium cations, piperidinium cations, ammonium cations, and pyrazolium cations.
[claim14]
14. The field-effect transistor according to claim 1, wherein: the ionic liquid is constituted with a cation selected from
1-methyl-3-methylimidazolium, 1-ethyl-3-methylimidazolium, 1-propyl-3-methylimidazolium, 1-butyl-3-methylimidazolium, 1-pentyl-3-methylimidazolium, 1-hexyll-3-methylimidazolium, 1-octyl-3-methylimidazolium, 1,2-dimethyl-3-propylimidazolium, 1-methyl-1-propylpyrrolidinium, 1-methyl-1-butylpyrrolidinium, 1-butyl-1-methylpyrrolidinium, 1-methyl-1-propylpiperidinium, trimethyl propyl ammonium, trimethyl octyl ammonium, trimethyl hexyl ammonium, trimethyl pentyl ammonium, and trimethyl butyl ammonium, 1-ethyl-2,3,5-trimethylpyrazolium, 1-butyl-2,3,5-trimethylpyrazolium and 1-propyl-2,3,5-trimethylpyrazolium; and
an anion selected from
bis(trifluoromethanesulfonyl)imide, bis(fluorosulfonyl)imide, bis(perfluoroethylsulfonyl)imide, tetrafluoroborate, hexafluorophosphate, and dicyanoamine.
[claim15]
15. The field-effect transistor according to claim 14, wherein: the ionic liquid is selected from;
1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide, 1-ethyl-3-methylimidazolium bis(perfluoroethylsulfonyl)imide, 1-ethyl-3-methylimidazolium tetrafluoroborate, 1-ethyl-3-methylimidazolium dicyanoamine, 1-methyl-1-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide, 1-methyl-1-propylpyrrolidinium bis(fluorosulfonyl)imide, 1-methyl-1-propylpiperidinium bis(trifluoromethanesulfonyl)imide, trimethylbutylammonium bis(trifluoromethanesulfonyl)imide, and trimethylpentylammonium bis(trifluoromethanesulfonyl)imide.
[claim16]
16. The field-effect transistor according to claim 15, wherein: the ionic liquid is selected from;
1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide and 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide.
[claim17]
17. The field-effect transistor according to claim 1, further comprising: a substrate upon which the source electrode, the drain electrode, and the gate electrode are disposed.
[claim18]
18. The field-effect transistor according to claim 1, wherein: the substrate is elastic.
[claim19]
19. An organic field-effect device that includes an field-effect transistor according to claim 1.
[claim20]
20. An intermediate structural body for producing an organic field-effect transistor, comprising: a source electrode;
a drain electrode;
an organic semiconductor layer in contact with the source electrode and the drain electrode; and
a gate electrode in contact with the gate insulating layer, wherein:
the gate insulating layer is in a liquid state with a viscosity that is equal to 150 mPas (millipascals per second) or less at room temperature and is constituted of an ionic liquid as a sole or main component thereof, and
a gate electrode separated from the organic semiconductor layer over a specific gap which is determined such that capillary force can be obtained for a liquid electrolyte constituted of an ionic liquid.
[claim21]
21. An intermediate structural body, comprising: a substrate with a depressed area of a predetermined depth on a surface thereof which is determined such that capillary force can be achieved in a liquid electrolyte with a viscosity that is equal to 150 mPas (millipascals per second) or less at room temperature and having an ionic liquid as a sole or main component thereof;
a source electrode and a drain electrode formed on a surface of the substrate so as to face opposite each other across the depressed area; and
a gate electrode formed on a bottom surface of the depressed area.
[claim22]
22. The intermediate structural body according to claim 21, wherein: the substrate is elastic.
  • 発明者/出願人(英語)
  • TAKEYA JUNICHI
  • ONO SHIMPEI
  • SEKI SHIRO
  • CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Structures and control of interfaces AREA
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