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Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device

Foreign code F110005406
File No. K02805WO
Posted date Sep 5, 2011
Country United States of America
Application number 45842009
Gazette No. 20100051913
Gazette No. 8203138
Date of filing Jul 10, 2009
Gazette Date Mar 4, 2010
Gazette Date Jun 19, 2012
Priority data
  • P2008-004629 (Jan 11, 2008) JP
  • P2008-004630 (Jan 11, 2008) JP
  • 2008WO-JP65700 (Sep 1, 2008) WO
Title Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device
Abstract (US8203138)
An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer.
The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid.
Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher.
As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
Scope of claims [claim1]
1. A field-effect transistor comprising: a source electrode and a drain electrode;
an organic semiconductor layer in contact with the source electrode and the drain electrode;
a gate insulating layer adjacent to the organic semiconductor layer; and
a gate electrode in contact with the gate insulating layer, wherein:
the gate insulating layer is in a liquid state with a viscosity that is equal to 150 mPas (millipascals per second) or less at room temperature and is constituted of an ionic liquid as a sole or main component thereof.
[claim2]
2. The field-effect transistor according to claim 1, wherein: the gate electrode is separated from the organic semiconductor layer over a specific gap which is determined such that capillary force can be achieved.
[claim3]
3. The field-effect transistor according to claim 2, wherein: the ionic liquid is held within closed space formed at the field-effect transistor.
[claim4]
4. The field-effect transistor according to claim 1, wherein: the ionic liquid is held in the field-effect transistor by capillary force.
[claim5]
5. The field-effect transistor according to claim 1, wherein: the ionic liquid is held within closed space formed at the field-effect transistor.
[claim6]
6. The field-effect transistor according to claim 1, wherein: a capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz or higher.
[claim7]
7. The field-effect transistor according to claim 6, wherein: the ionic liquid is free of glue and thickener.
[claim8]
8. The field-effect transistor according to claim 7, wherein: the organic semiconductor is either a rubrene or a pentacene.
[claim9]
9. The field-effect transistor according to claim 1, wherein: the organic semiconductor is either a rubrene or a pentacene.
[claim10]
10. The field-effect transistor according to claim 1, wherein: the ionic liquid is free of glue and thickener.
[claim11]
11. The field-effect transistor according to claim 1, wherein: the ionic liquid contains nano particles of an inorganic oxide.
[claim12]
12. The field-effect transistor according to claim 1, wherein: the gate insulating layer in the liquid state contains inorganic ions.
[claim13]
13. The field-effect transistor according to claim 1, wherein: a cation constituting the ionic liquid is selected from
imidazolium cations, pyrrolidinium cations, piperidinium cations, ammonium cations, and pyrazolium cations.
[claim14]
14. The field-effect transistor according to claim 1, wherein: the ionic liquid is constituted with a cation selected from
1-methyl-3-methylimidazolium, 1-ethyl-3-methylimidazolium, 1-propyl-3-methylimidazolium, 1-butyl-3-methylimidazolium, 1-pentyl-3-methylimidazolium, 1-hexyll-3-methylimidazolium, 1-octyl-3-methylimidazolium, 1,2-dimethyl-3-propylimidazolium, 1-methyl-1-propylpyrrolidinium, 1-methyl-1-butylpyrrolidinium, 1-butyl-1-methylpyrrolidinium, 1-methyl-1-propylpiperidinium, trimethyl propyl ammonium, trimethyl octyl ammonium, trimethyl hexyl ammonium, trimethyl pentyl ammonium, and trimethyl butyl ammonium, 1-ethyl-2,3,5-trimethylpyrazolium, 1-butyl-2,3,5-trimethylpyrazolium and 1-propyl-2,3,5-trimethylpyrazolium; and
an anion selected from
bis(trifluoromethanesulfonyl)imide, bis(fluorosulfonyl)imide, bis(perfluoroethylsulfonyl)imide, tetrafluoroborate, hexafluorophosphate, and dicyanoamine.
[claim15]
15. The field-effect transistor according to claim 14, wherein: the ionic liquid is selected from;
1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide, 1-ethyl-3-methylimidazolium bis(perfluoroethylsulfonyl)imide, 1-ethyl-3-methylimidazolium tetrafluoroborate, 1-ethyl-3-methylimidazolium dicyanoamine, 1-methyl-1-propylpyrrolidinium bis(trifluoromethanesulfonyl)imide, 1-methyl-1-propylpyrrolidinium bis(fluorosulfonyl)imide, 1-methyl-1-propylpiperidinium bis(trifluoromethanesulfonyl)imide, trimethylbutylammonium bis(trifluoromethanesulfonyl)imide, and trimethylpentylammonium bis(trifluoromethanesulfonyl)imide.
[claim16]
16. The field-effect transistor according to claim 15, wherein: the ionic liquid is selected from;
1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide and 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide.
[claim17]
17. The field-effect transistor according to claim 1, further comprising: a substrate upon which the source electrode, the drain electrode, and the gate electrode are disposed.
[claim18]
18. The field-effect transistor according to claim 1, wherein: the substrate is elastic.
[claim19]
19. An organic field-effect device that includes an field-effect transistor according to claim 1.
[claim20]
20. An intermediate structural body for producing an organic field-effect transistor, comprising: a source electrode;
a drain electrode;
an organic semiconductor layer in contact with the source electrode and the drain electrode; and
a gate electrode in contact with the gate insulating layer, wherein:
the gate insulating layer is in a liquid state with a viscosity that is equal to 150 mPas (millipascals per second) or less at room temperature and is constituted of an ionic liquid as a sole or main component thereof, and
a gate electrode separated from the organic semiconductor layer over a specific gap which is determined such that capillary force can be obtained for a liquid electrolyte constituted of an ionic liquid.
[claim21]
21. An intermediate structural body, comprising: a substrate with a depressed area of a predetermined depth on a surface thereof which is determined such that capillary force can be achieved in a liquid electrolyte with a viscosity that is equal to 150 mPas (millipascals per second) or less at room temperature and having an ionic liquid as a sole or main component thereof;
a source electrode and a drain electrode formed on a surface of the substrate so as to face opposite each other across the depressed area; and
a gate electrode formed on a bottom surface of the depressed area.
[claim22]
22. The intermediate structural body according to claim 21, wherein: the substrate is elastic.
  • Inventor, and Inventor/Applicant
  • TAKEYA JUNICHI
  • ONO SHIMPEI
  • SEKI SHIRO
  • CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) PRESTO Structures and control of interfaces AREA
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