TOP > 外国特許検索 > Light-emitting transistor

Light-emitting transistor

外国特許コード F110005514
整理番号 N031-01WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 58935905
公報番号 20070187665
公報番号 07531832
出願日 平成18年8月14日(2006.8.14)
公報発行日 平成19年8月16日(2007.8.16)
公報発行日 平成21年5月12日(2009.5.12)
国際出願番号 PCT/JP2005/002162
国際公開番号 WO2005/079119
国際出願日 平成17年2月14日(2005.2.14)
国際公開日 平成17年8月25日(2005.8.25)
  • 特願2004-038951 (2004.2.16) JP
発明の名称 (英語) Light-emitting transistor
発明の概要(英語) The present invention intends to provide a light-emitting transistor (LEFET), a light-emitting device with a switching function, which can produce an adequately strong emission of light with higher emission efficiency. The drain electrode 25 is made of aluminum and the source electrode 24 is made of gold. When a voltage is applied between the source electrode 24 and the drain electrode 25, the source electrodes 24 and the drain electrodes 25 inject positive holes and electrons into the light-emitter layer 26, respectively. The positive holes and the electrons recombine, whereby the light-emitter layer 26 generates light. The on/off state of the emission can be controlled by switching the gate voltage on and off. In contrast to conventional LEFETs in which the drain electrode is also made of gold, the present invention uses aluminum, whose work function is lower than that of gold, whereby a larger number of electrons is injected into the light-emitter layer 26 at a lower voltage. Therefore, both the emission strength and the emission efficiency are improved.
  • 発明者/出願人(英語)
  • Tada, Hirokazu; Okazaki [JP]
  • Sakanoue, Tomo; Okazaki [JP]
  • Japan Science and Technology Agency, Kawaguchi [JP]
  • 257/40
  • 257/E25.008
参考情報 (研究プロジェクト等) CREST Creation and Application of Nano Structural Materials for Advanced Data Processing and Communication AREA