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Nonvolatile phase change magnetic material, manufacturing method thereof, and nonvolatile phase change magnetic memory using the same UPDATE

外国特許コード F110005516
整理番号 N031-04WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 66131805
公報番号 20080026257
公報番号 8105704
出願日 平成17年8月30日(2005.8.30)
公報発行日 平成20年1月31日(2008.1.31)
公報発行日 平成24年1月31日(2012.1.31)
国際出願番号 JP2005015808
国際公開番号 WO2006025413
国際出願日 平成17年8月30日(2005.8.30)
国際公開日 平成18年3月9日(2006.3.9)
優先権データ
  • 特願2004-251051 (2004.8.30) JP
  • 2005WO-JP15808 (2005.8.30) WO
発明の名称 (英語) Nonvolatile phase change magnetic material, manufacturing method thereof, and nonvolatile phase change magnetic memory using the same UPDATE
発明の概要(英語) (US8105704)
A memory is provided that is improved in cost, life, energy consumption and recording density over existing optical disks and hard disks and operates under novel principles, as well as its manufacturing method.
A nonvolatile phase change magnetic memory comprises a substrate and a film loaded on the substrate, which film is of a crystalline transition metal chalcogenide compound that in composition is deficient in transition metal from its stoichiometric ratio composition and expressed by formula: AyX where A is a transition metal, X is a chalcogen element and 0<y<1, and in which film a minute portion subjected to a temperature history is made to form a ferromagnetic phase (1) or an antiferromagnetic phase (7) in which holes (4) for transition metal (2) are orderly or disorderly arranged and is stored with information as a magnetization based on the ferromagnetic phase (1) or antiferromagnetic phase (7).
特許請求の範囲(英語) [claim1]
1. A nonvolatile phase change magnetic memory, comprising: a substrate; and
a non-volatile magnetic memory layer on said substrate, the non-volatile magnetic memory layer being made of a crystalline non-stoichiometric transition metal chalcogenide binary compound, which in composition is deficient in transition metal from its stoichiometric ratio composition, wherein the crystalline transition metal chalcogenide binary compound is expressed by formula: FeyS and 0.875 <y<0.93, thereby having vacancies in transition metal sites,
wherein said crystalline transition metal chalcogenide compound is structured such that spins of the transition metal atoms in each crystallographic c-plane are ferromagnetically coupled to each other, and spins of the transition metal in each crystallographic c-plane are antiferromagnetically coupled to spins of the transition metal atoms in an adjacent crystallographic c-plane,
wherein said crystalline transition metal chalcogenide compound has first and second phases: the first phase having an ordered distribution of the vacancies at the transition metal sites such that the c-plane that has the vacancies at the transition metal atom sites occurs periodically in every other c-plane along an c-axis so that said crystalline transition metal compound exhibits ferromagnetism, a second phase thereof having a disordered distribution of the vacancies in the transition metal sites such that the vacancies at the transition metal sites are distributed randomly relative to the first phase so that said crystalline transition metal compound exhibits antiferromagnetism,
wherein said crystalline transition metal chalcogenide compound in said first phase is transformed to said second phase when a first temperature history is applied thereto, and said crystalline transition metal chalcogenide compound in said second phase is transformed to said first phase when a second temperature history is applied thereto,
wherein said first temperature history comprises heating the crystalline transition metal chalcogenide compound to a temperature at which said ordered distribution of the vacancies at the transition metal sites vanishes, followed by rapid cooling,
wherein such second temperature history includes one of first and second sequences, the first sequence comprising heating the crystalline transition metal chalcogenide compound to a temperature at which said vacancies at the transition metal sites diffuse to exhibit said ordered distribution of the vacancies, followed by cooling, the second sequence comprising heating the crystalline transition metal chalcogenide compound to a temperature at which said ordered distribution of the vacancies at the transition metal sites vanishes, followed by cooling said crystalline transition metal chalcogenide compound at such a rate as to produce said ordered distribution of the vacancies at the transition metal sites upon cooling, and
wherein said non-volatile magnetic memory layer has ferromagnetic portions in which said crystalline transition metal chalcogenide compound is in its first phase, and antiferromagnetic portions in which said crystalline transition metal chalcogenide compound is in its second phase to represent information by a spatial distribution of said ferromagnetic portions and said antiferromagnetic portions.
[claim2]
2. The nonvolatile phase change magnetic memory as set forth in claim 1, wherein said non-volatile magnetic memory layer is configured such that when no information is stored, the crystalline transition metal chalcogenide of said non-volatile magnetic memory layer is in its first phase on a substantially entire surface, exhibiting ferromagnetism on the entire surface, and such that information can be stored on said non-volatile magnetic memory layer by selectively creating antiferromagnetic portions by local irradiation of a laser beam, and
wherein said non-volatile magnetic memory layer is configured such that the information stored in said non-volatile magnetic memory layer can be read out by an electromagnetic effect, and such that the information stored in said non-volatile magnetic memory layer can be erased by radiating a laser pulse onto said non-volatile magnetic memory layer in such a way as to generate the second temperature history to convert the antiferromagnetic portions to ferromagnetic portions.
[claim3]
3. The nonvolatile phase change magnetic memory as set forth in claim 1, wherein said non-volatile magnetic memory layer is configured such that when no information is stored, the crystalline transition metal chalcogenide of said non-volatile magnetic memory layer is in its second phase on a substantially entire surface, exhibiting antiferromagnetism on the entire surface, and such that information can be stored on said non-volatile magnetic memory layer by selectively creating ferromagnetic portions by local irradiation of a laser beam, and
wherein said non-volatile magnetic memory layer is configured such that the information stored in said non-volatile magnetic memory layer can be read out using an electromagnetic effect, and such that the information stored in said non-volatile magnetic memory layer can be erased by radiating a laser pulse onto said non-volatile magnetic memory layer in such a way as to generate the first temperature history to convert the ferromagnetic portions to antiferromagnetic portions.
[claim4]
4. The nonvolatile phase change magnetic memory as set forth in claim 2 or 3, wherein said non-volatile magnetic memory layer is configured such that the information stored on said non-volatile magnetic memory layer can be read from the film by the Kerr effect or Faraday effect on a laser beam directed to and reflect from said non-volatile magnetic memory layer.
[claim5]
5. The nonvolatile phase change magnetic memory as set forth in claim 2 or 3, wherein said non-volatile magnetic memory layer is configured such that the information stored on said non-volatile magnetic memory layer can be read from the film by detecting a magnetroresistance.
  • 発明者/出願人(英語)
  • TAKAGI HIDENORI
  • TAKAYAMA TOMOHIRO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • C01G049/12
  • G11B005/02
  • G11B005/706C
  • G11B011/105B1L
  • G11B011/105B3
  • G11B011/105M1
  • G11B011/105M2
  • G11B011/105M
  • H01F010/18
  • H01F041/22
  • M01P002/30
  • M01P004/42
  • S11B005/00W2E
  • S11B005/00W
  • T01F010/14
  • T01F041/14
参考情報 (研究プロジェクト等) CREST Creation and Application of Nano Structural Materials for Advanced Data Processing and Communication AREA
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