TOP > 外国特許検索 > Substrate with organic thin film, and transistor using same

Substrate with organic thin film, and transistor using same 新技術説明会

外国特許コード F110005537
整理番号 N071-06WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 59415205
公報番号 20070190330
公報番号 7692184
出願日 平成17年3月24日(2005.3.24)
公報発行日 平成19年8月16日(2007.8.16)
公報発行日 平成22年4月6日(2010.4.6)
国際出願番号 JP2005006199
国際公開番号 WO2005091377
国際出願日 平成17年3月24日(2005.3.24)
国際公開日 平成17年9月29日(2005.9.29)
優先権データ
  • 特願2004-088077 (2004.3.24) JP
  • 2005WO-JP06199 (2005.3.24) WO
発明の名称 (英語) Substrate with organic thin film, and transistor using same 新技術説明会
発明の概要(英語) (US7692184)
A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4).
A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3).
A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained.
By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.
特許請求の範囲(英語) [claim1]
1. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer, wherein said substrate is an insulating substrate, said buffer layer consisting essentially of either pentacene or pentacene fluoride; said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene; and said organic thin film is a two dimensional film.
[claim2]
2. The substrate having an organic thin film as set forth in claim 1, characterized in that a layer easily oriented with said buffer layer is further inserted between said substrate and said buffer layer.
[claim3]
3. The substrate having an organic thin film as set forth in claim 1, characterized in that said insulating substrate is a sapphire substrate and said Cn fullerene is C60.
[claim4]
4. The substrate having an organic thin film as set forth in claim 3, characterized in that the surface of said sapphire substrate is flattening-treated, and said buffer layer consists of either pentacene or pentacene fluoride deposited as a molecular layer unit.
[claim5]
5. A transistor provided with an organic thin film formed on a substrate, characterized in that: said organic thin film is deposited on said substrate via a buffer layer, and orienting said organic thin film flatly; wherein said substrate is an insulating substrate, said buffer layer consisting essentially of either pentacene or pentacene fluoride; wherein the organic thin film overlies the buffer layer; said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene; and said organic thin film is a two dimensional film.
[claim6]
6. The transistor as set forth in claim 5, characterized in that a layer easily oriented with said buffer layer is further inserted between said substrate and said buffer layer.
[claim7]
7. The transistor as set forth in claim 5, characterized in that said insulating substrate is a sapphire substrate, and said Cn fullerene is C60.
[claim8]
8. The transistor as set forth in claim 7, characterized in that the surface of said sapphire substrate is flattening-treated, and said buffer layer consists of either pentacene or pentacene fluoride deposited as a molecular layer unit.
[claim9]
9. A substrate having an organic thin film, characterized in that: a buffer layer and an organic thin film are sequentially deposited on the substrate so that the organic thin film overlies the buffer layer, said buffer layer consists essentially of either pentacene or pentacene fluoride, said buffer layer orients said organic thin film flatly, and said organic thin film is a two dimensional film.
[claim10]
10. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer; said buffer layer consists essentially of either pentacene or pentacene fluoride, said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene, said buffer layer orients said organic thin film flatly, and said organic thin film is a two dimensional film.
[claim11]
11. A transistor, characterized in that: it is a transistor having an organic thin film formed on a substrate, said organic thin film is deposited on said substrate via a buffer layer consisting essentially of either pentacene or pentacene fluoride, said buffer layer orienting the organic thin film flatly, wherein the organic thin film overlies the buffer layer, and said organic thin film is a two dimensional film.
[claim12]
12. A transistor, characterized in that: it is a transistor having an organic thin film formed on substrate, said organic thin film is deposited on said substrate via a buffer layer consisting essentially of either pentacene or pentacene fluoride, said buffer layer orienting the organic thin film flatly, and said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene, wherein the organic thin film overlies the buffer layer, and said organic thin film is a two dimensional film.
  • 発明者/出願人(英語)
  • KOINUMA HIDEOMI
  • ITAKA KENJI
  • YAMASHIRO MITSUGU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • B82Y010/00
  • H01L051/00A2F
  • H01L051/05B2B6
  • T01L051/00M4B
  • T01L051/05B2B10B
  • T01L051/05B2B4
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close