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Substrate with organic thin film, and transistor using same meetings

Foreign code F110005537
File No. N071-06WO
Posted date Sep 7, 2011
Country United States of America
Application number 59415205
Gazette No. 20070190330
Gazette No. 7692184
Date of filing Mar 24, 2005
Gazette Date Aug 16, 2007
Gazette Date Apr 6, 2010
International application number JP2005006199
International publication number WO2005091377
Date of international filing Mar 24, 2005
Date of international publication Sep 29, 2005
Priority data
  • P2004-088077 (Mar 24, 2004) JP
  • 2005WO-JP06199 (Mar 24, 2005) WO
Title Substrate with organic thin film, and transistor using same meetings
Abstract (US7692184)
A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4).
A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3).
A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained.
By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.
Scope of claims [claim1]
1. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer, wherein said substrate is an insulating substrate, said buffer layer consisting essentially of either pentacene or pentacene fluoride; said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene; and said organic thin film is a two dimensional film.
[claim2]
2. The substrate having an organic thin film as set forth in claim 1, characterized in that a layer easily oriented with said buffer layer is further inserted between said substrate and said buffer layer.
[claim3]
3. The substrate having an organic thin film as set forth in claim 1, characterized in that said insulating substrate is a sapphire substrate and said Cn fullerene is C60.
[claim4]
4. The substrate having an organic thin film as set forth in claim 3, characterized in that the surface of said sapphire substrate is flattening-treated, and said buffer layer consists of either pentacene or pentacene fluoride deposited as a molecular layer unit.
[claim5]
5. A transistor provided with an organic thin film formed on a substrate, characterized in that: said organic thin film is deposited on said substrate via a buffer layer, and orienting said organic thin film flatly; wherein said substrate is an insulating substrate, said buffer layer consisting essentially of either pentacene or pentacene fluoride; wherein the organic thin film overlies the buffer layer; said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene; and said organic thin film is a two dimensional film.
[claim6]
6. The transistor as set forth in claim 5, characterized in that a layer easily oriented with said buffer layer is further inserted between said substrate and said buffer layer.
[claim7]
7. The transistor as set forth in claim 5, characterized in that said insulating substrate is a sapphire substrate, and said Cn fullerene is C60.
[claim8]
8. The transistor as set forth in claim 7, characterized in that the surface of said sapphire substrate is flattening-treated, and said buffer layer consists of either pentacene or pentacene fluoride deposited as a molecular layer unit.
[claim9]
9. A substrate having an organic thin film, characterized in that: a buffer layer and an organic thin film are sequentially deposited on the substrate so that the organic thin film overlies the buffer layer, said buffer layer consists essentially of either pentacene or pentacene fluoride, said buffer layer orients said organic thin film flatly, and said organic thin film is a two dimensional film.
[claim10]
10. A substrate having an organic thin film, characterized in that: a buffer layer and the organic thin film are sequentially deposited on a substrate so that the organic thin film overlies the buffer layer; said buffer layer consists essentially of either pentacene or pentacene fluoride, said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene, said buffer layer orients said organic thin film flatly, and said organic thin film is a two dimensional film.
[claim11]
11. A transistor, characterized in that: it is a transistor having an organic thin film formed on a substrate, said organic thin film is deposited on said substrate via a buffer layer consisting essentially of either pentacene or pentacene fluoride, said buffer layer orienting the organic thin film flatly, wherein the organic thin film overlies the buffer layer, and said organic thin film is a two dimensional film.
[claim12]
12. A transistor, characterized in that: it is a transistor having an organic thin film formed on substrate, said organic thin film is deposited on said substrate via a buffer layer consisting essentially of either pentacene or pentacene fluoride, said buffer layer orienting the organic thin film flatly, and said organic thin film is either Cn fullerene, wherein n is an integer of 60 or more, or rubrene, wherein the organic thin film overlies the buffer layer, and said organic thin film is a two dimensional film.
  • Inventor, and Inventor/Applicant
  • KOINUMA HIDEOMI
  • ITAKA KENJI
  • YAMASHIRO MITSUGU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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