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Aluminum-containing zinc oxide-based n-type thermoelectric conversion material

外国特許コード F110005540
整理番号 N071-14WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 99217509
公報番号 20110101286
公報番号 8454860
出願日 平成21年2月17日(2009.2.17)
公報発行日 平成23年5月5日(2011.5.5)
公報発行日 平成25年6月4日(2013.6.4)
国際出願番号 JP2009052684
国際公開番号 WO2009154019
国際出願日 平成21年2月17日(2009.2.17)
国際公開日 平成21年12月23日(2009.12.23)
優先権データ
  • 特願2008-160994 (2008.6.19) JP
  • 2009WO-JP52684 (2009.2.17) WO
発明の名称 (英語) Aluminum-containing zinc oxide-based n-type thermoelectric conversion material
発明の概要(英語) (US8454860)
ZnAlO series thermoelectric conversion materials have large thermal conductivity kappa about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application.
An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01@x@0.04, 0.01@y@0.03, 0.9@x/y@2.0).
ZT value not less than 0.6 can be realized at 1000 deg C.
By co-doping Al and Ga into ZnO, the thermal conductivity kappa can be significantly reduced maintaining a large electric conductivity sigma, resulting in a significant improvement of the thermoelectric performance.
特許請求の範囲(英語) [claim1]
1. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, wherein the aluminum including zinc oxide is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01 <= x <= 0.04, 0.01 <= y <= 0.03, 0.9 <= x/y <= 2.0).
[claim2]
2. The n-type thermoelectric conversion material of claim 1, wherein the n-type thermoelectric conversion material has a dimensionless figure of merit (ZT) not smaller than 0.2 at 600 deg C.
[claim3]
3. A method for manufacturing the n-type thermoelectric conversion material of claim 1 or claim 2 comprising sintering of powder materials, wherein, Al and Ga are simultaneously doped to form solid solution in ZnO, and further
a fine structure is formed, wherein fine particles originated from Ga are dispersed in the fine structure.
  • 発明者/出願人(英語)
  • OHTAKI MICHITAKA
  • ARAKI KAZUHIKO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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