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Aluminum-containing zinc oxide-based n-type thermoelectric conversion material

Foreign code F110005540
File No. N071-14WO
Posted date Sep 7, 2011
Country United States of America
Application number 99217509
Gazette No. 20110101286
Gazette No. 8454860
Date of filing Feb 17, 2009
Gazette Date May 5, 2011
Gazette Date Jun 4, 2013
International application number JP2009052684
International publication number WO2009154019
Date of international filing Feb 17, 2009
Date of international publication Dec 23, 2009
Priority data
  • P2008-160994 (Jun 19, 2008) JP
  • 2009WO-JP52684 (Feb 17, 2009) WO
Title Aluminum-containing zinc oxide-based n-type thermoelectric conversion material
Abstract (US8454860)
ZnAlO series thermoelectric conversion materials have large thermal conductivity kappa about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application.
An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01@x@0.04, 0.01@y@0.03, 0.9@x/y@2.0).
ZT value not less than 0.6 can be realized at 1000 deg C.
By co-doping Al and Ga into ZnO, the thermal conductivity kappa can be significantly reduced maintaining a large electric conductivity sigma, resulting in a significant improvement of the thermoelectric performance.
Scope of claims [claim1]
1. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, wherein the aluminum including zinc oxide is represented by a general formula: Zn1-x-yAlxGayO (wherein 0.01 <= x <= 0.04, 0.01 <= y <= 0.03, 0.9 <= x/y <= 2.0).
[claim2]
2. The n-type thermoelectric conversion material of claim 1, wherein the n-type thermoelectric conversion material has a dimensionless figure of merit (ZT) not smaller than 0.2 at 600 deg C.
[claim3]
3. A method for manufacturing the n-type thermoelectric conversion material of claim 1 or claim 2 comprising sintering of powder materials, wherein, Al and Ga are simultaneously doped to form solid solution in ZnO, and further
a fine structure is formed, wherein fine particles originated from Ga are dispersed in the fine structure.
  • Inventor, and Inventor/Applicant
  • OHTAKI MICHITAKA
  • ARAKI KAZUHIKO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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