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Light-detectable solid thin-film secondary battery

外国特許コード F110005729
整理番号 Y0359WO
掲載日 2011年9月12日
出願国 アメリカ合衆国
出願番号 54220503
公報番号 20060159986
公報番号 7276312
出願日 平成15年12月26日(2003.12.26)
公報発行日 平成18年7月20日(2006.7.20)
公報発行日 平成19年10月2日(2007.10.2)
国際出願番号 JP2003017079
国際公開番号 WO2004064189
国際出願日 平成15年12月26日(2003.12.26)
国際公開日 平成16年7月29日(2004.7.29)
優先権データ
  • 特願2003-006379 (2003.1.14) JP
  • 2003WO-JP17079 (2003.12.26) WO
発明の名称 (英語) Light-detectable solid thin-film secondary battery
発明の概要(英語) (US7276312)
To provide novel devices constituting light detection systems with a simple configuration, a low maintenance cost, a reduced size and weight, and high reliability by integrating light detection components and power supplies.
A photosensitive solid-state thin-film lithium-ion secondary cell including a photosensitive negative-electrode active material layer as a component, wherein extraneous light can be constantly detected by utilizing a change in open-circuit voltage of the cell caused when the extraneous light is incident on the photosensitive negative-electrode active material layer.
Lithium ions can be readily received and emitted and light in a broad wavelength range over a near-infrared light range, the entire visible light range, and a near-ultraviolet light range can be detected by utilizing a porous silicon layer having a controlled porosity as the negative-electrode active material layer.
特許請求の範囲(英語) [claim1]
1. A photosensitive solid-state thin-film lithium-ion secondary cell comprising: a substrate;
a photosensitive negative-electrode active material layer comprising porous silicon formed on said substrate by anodizing;a solid electrolyte layer formed on said photosensitive negative-electrode active material;a positive-electrode active material layer formed on said solid electrolyte layer;
and
a current collector layer formed on said positive-electrode active material layer,wherein the photosensitive solid-state thin-film lithium-ion secondary cell is structured so as to make said photosensitive negative-electrode active material layer receive extraneous light,wherein extraneous light is to be constantly detected by utilizing a change in open-circuit voltage of the cell caused when the extraneous light is incident on the photosensitive negative-electrode active material layer.
[claim2]
2. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein lithium ions are readily received and emitted and light in a broad wavelength range over a near-infrared light range, the entire visible light range, and a near-ultraviolet light range is detected by utilizing a porous silicon layer having a controlled porosity as the negative-electrode active material layer.
[claim3]
3. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein each of the positive-electrode active material layer and the current collector layer has a film composition and thickness such that the overall transmittance of visible light in the range of 400 nm to 800 nm exceeds 1% on average.
[claim4]
4. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein the photosensitive negative-electrode active material layer comprising the porous silicon is formed by anodizing to dig downward a surface of a silicon wafer substrate.
[claim5]
5. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein a light detection sensitivity is improved by increasing incidence efficiency of light from the positive-electrode side by forming the positive-electrode active material layer disposed as an upper layer in a stripe pattern or in a mesh pattern.
[claim6]
6. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein the photosensitive solid-state thin-film secondary cell is formed together with a electronic circuit of a photodetector on a single silicon substrate.
  • 発明者/出願人(英語)
  • BABA MAMORU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • G01J001/42
  • H01G009/20B2
  • H01M004/134
  • H01M004/38
  • H01M006/40
  • H01M010/04F
  • H01M010/0525
  • H01M010/48F
  • H01M014/00B
  • T01M004/02C
  • T01M010/052
  • T01M010/0562
  • Y02E010/54D
  • Y02E060/12B
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