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Light-detectable solid thin-film secondary battery

Foreign code F110005729
File No. Y0359WO
Posted date Sep 12, 2011
Country United States of America
Application number 54220503
Gazette No. 20060159986
Gazette No. 7276312
Date of filing Dec 26, 2003
Gazette Date Jul 20, 2006
Gazette Date Oct 2, 2007
International application number JP2003017079
International publication number WO2004064189
Date of international filing Dec 26, 2003
Date of international publication Jul 29, 2004
Priority data
  • P2003-006379 (Jan 14, 2003) JP
  • 2003WO-JP17079 (Dec 26, 2003) WO
Title Light-detectable solid thin-film secondary battery
Abstract (US7276312)
To provide novel devices constituting light detection systems with a simple configuration, a low maintenance cost, a reduced size and weight, and high reliability by integrating light detection components and power supplies.
A photosensitive solid-state thin-film lithium-ion secondary cell including a photosensitive negative-electrode active material layer as a component, wherein extraneous light can be constantly detected by utilizing a change in open-circuit voltage of the cell caused when the extraneous light is incident on the photosensitive negative-electrode active material layer.
Lithium ions can be readily received and emitted and light in a broad wavelength range over a near-infrared light range, the entire visible light range, and a near-ultraviolet light range can be detected by utilizing a porous silicon layer having a controlled porosity as the negative-electrode active material layer.
Scope of claims [claim1]
1. A photosensitive solid-state thin-film lithium-ion secondary cell comprising: a substrate;
a photosensitive negative-electrode active material layer comprising porous silicon formed on said substrate by anodizing;a solid electrolyte layer formed on said photosensitive negative-electrode active material;a positive-electrode active material layer formed on said solid electrolyte layer;
and
a current collector layer formed on said positive-electrode active material layer,wherein the photosensitive solid-state thin-film lithium-ion secondary cell is structured so as to make said photosensitive negative-electrode active material layer receive extraneous light,wherein extraneous light is to be constantly detected by utilizing a change in open-circuit voltage of the cell caused when the extraneous light is incident on the photosensitive negative-electrode active material layer.
[claim2]
2. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein lithium ions are readily received and emitted and light in a broad wavelength range over a near-infrared light range, the entire visible light range, and a near-ultraviolet light range is detected by utilizing a porous silicon layer having a controlled porosity as the negative-electrode active material layer.
[claim3]
3. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein each of the positive-electrode active material layer and the current collector layer has a film composition and thickness such that the overall transmittance of visible light in the range of 400 nm to 800 nm exceeds 1% on average.
[claim4]
4. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein the photosensitive negative-electrode active material layer comprising the porous silicon is formed by anodizing to dig downward a surface of a silicon wafer substrate.
[claim5]
5. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein a light detection sensitivity is improved by increasing incidence efficiency of light from the positive-electrode side by forming the positive-electrode active material layer disposed as an upper layer in a stripe pattern or in a mesh pattern.
[claim6]
6. The photosensitive solid-state thin-film secondary cell according to claim 1, wherein the photosensitive solid-state thin-film secondary cell is formed together with a electronic circuit of a photodetector on a single silicon substrate.
  • Inventor, and Inventor/Applicant
  • BABA MAMORU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
U.S. Cl./(Sub)
  • G01J001/42
  • H01G009/20B2
  • H01M004/134
  • H01M004/38
  • H01M006/40
  • H01M010/04F
  • H01M010/0525
  • H01M010/48F
  • H01M014/00B
  • T01M004/02C
  • T01M010/052
  • T01M010/0562
  • Y02E010/54D
  • Y02E060/12B
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