METHOD FOR QUANTITATIVELY EVALUATING CONCENTRATION OF ATOMIC VACANCIES EXISTING IN SILICON WAFER, METHOD FOR MANUFACTURING SILICON WAFER, AND SILICON WAFER MANUFACTURED BY THE METHOD FOR MANUFACTURING SILICON WAFER
| Foreign code | F110005884 |
|---|---|
| File No. | S2009-0720-C0 |
| Posted date | Nov 9, 2011 |
| Country | WIPO |
| International application number | 2010JP063967 |
| International publication number | WO 2011/027670 |
| Date of international filing | Aug 19, 2010 |
| Date of international publication | Mar 10, 2011 |
| Priority data |
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| Title |
METHOD FOR QUANTITATIVELY EVALUATING CONCENTRATION OF ATOMIC VACANCIES EXISTING IN SILICON WAFER, METHOD FOR MANUFACTURING SILICON WAFER, AND SILICON WAFER MANUFACTURED BY THE METHOD FOR MANUFACTURING SILICON WAFER
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| Abstract | Disclosed are a quantitative evaluation method, by which concentration of atomic vacancies existing in a silicon wafer can be more efficiently evaluated, a method for manufacturing a silicon wafer, and the silicon wafer manufactured by such manufacturing method. The quantitative evaluation method is provided with: a detection step, wherein ultrasonic pulses are oscillated in a state wherein an external magnetic field is applied to the silicon wafer (26), while the silicon wafer (26) is held at a predetermined temperature, measurement wave pulses formed by propagating the ultrasonic pulses in the silicon wafer (26) are received, and a phase difference between the ultrasonic wave pulses and the measurement wave pulses is detected; and a calculating step wherein an elastic constant is calculated on the basis of the phase difference. The concentration of the atomic vacancies in the silicon wafer (26) is evaluated by changing the external magnetic field and calculating the elastic constant that corresponds to the change of the external magnetic field. |
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| IPC(International Patent Classification) | |
| Specified countries | AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM) |
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