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SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE

Foreign code F110005888
File No. S2010-0011-C0
Posted date Nov 9, 2011
Country WIPO
International application number 2010JP067452
International publication number WO 2011/043339
Date of international filing Oct 5, 2010
Date of international publication Apr 14, 2011
Priority data
  • 2009-231587 (Oct 5, 2009) JP
Title SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE
Abstract Disclosed is a solid-state imaging device that has good charge transfer efficiency and wherein high speed operation and a higher resolution are possible with a simple pixel structure. The solid-state imaging device is provided with a p-type semiconductor region (21); an n-type embedded region (23) that, with the semiconductor region (21), forms a photodiode; an n-type discharge region (27) that has a higher dopant density than the embedded region (23) and that discharges from the embedded region (23) a charge generated by the photodiode; an n-type read region (28) that has a higher dopant density than the embedded region (23) and that transfers and stores charge from the embedded region (23) when charge is not being discharged; and voltage gradient alteration means (31, 32) that alter the voltage gradient of the potential profile from the embedded region (23) to the read region (28) and the voltage gradient of the potential profile from the embedded region (23) to the discharge region (27), and that control the transfer and discharge of charge.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • National University Corporation Shizuoka University
  • Inventor
  • KAWAHITO, Shoji
  • SAWADA, Tomonari
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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