Pattern formation method, pattern, and device
Disclosed is a pattern formation method comprising: a first step of arranging at least one silane compound selected from the group consisting of silicon hydride compounds and silicon halide compounds in a gap formed between a substrate and a pattern-shaped mold
and a second step of applying at least one treatment selected from a heat treatment and an ultraviolet ray radiation treatment to the arranged silane compound. When the second step is carried out under an inert atmosphere or a reductive atmosphere, a pattern comprising silicon can be formed. When at least a part of the second step is carried out under an oxygen-containing atmosphere, a pattern comprising a silicon oxide can be formed.