Pattern formation method, pattern, and device
|Posted date||Nov 9, 2011|
|Date of filing||Apr 9, 2010|
|Gazette Date||Mar 16, 2011|
|Title||Pattern formation method, pattern, and device|
Disclosed is a pattern formation method comprising: a first step of arranging at least one silane compound selected from the group consisting of silicon hydride compounds and silicon halide compounds in a gap formed between a substrate and a pattern-shaped mold
and a second step of applying at least one treatment selected from a heat treatment and an ultraviolet ray radiation treatment to the arranged silane compound. When the second step is carried out under an inert atmosphere or a reductive atmosphere, a pattern comprising silicon can be formed. When at least a part of the second step is carried out under an oxygen-containing atmosphere, a pattern comprising a silicon oxide can be formed.
|IPC(International Patent Classification)|
|Reference ( R and D project )||ERATO SHIMODA Nano-Liquid Process AREA|
Contact Information for " Pattern formation method, pattern, and device "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
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