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Pattern formation method, pattern, and device

Foreign code F110005912
File No. E08604TW
Posted date Nov 9, 2011
Country Taiwan
Application number 99111081
Gazette No. 201109159
Date of filing Apr 9, 2010
Gazette Date Mar 16, 2011
Priority data
  • P2009-095500 (Apr 10, 2009) JP
Title Pattern formation method, pattern, and device
Abstract

Disclosed is a pattern formation method comprising: a first step of arranging at least one silane compound selected from the group consisting of silicon hydride compounds and silicon halide compounds in a gap formed between a substrate and a pattern-shaped mold

and a second step of applying at least one treatment selected from a heat treatment and an ultraviolet ray radiation treatment to the arranged silane compound. When the second step is carried out under an inert atmosphere or a reductive atmosphere, a pattern comprising silicon can be formed. When at least a part of the second step is carried out under an oxygen-containing atmosphere, a pattern comprising a silicon oxide can be formed.

  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, TATSUYA,
  • MATSUKI, YASUO,
  • KAWAJIRI, RYO,
  • MASUDA, TAKASHI,
  • KANEDA, TOSHIHIKO
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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