Top > Search of International Patents > PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD

PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD

Foreign code F110005916
File No. E08608WO
Posted date Nov 16, 2011
Country WIPO
International application number 2011JP060581
International publication number WO 2011/138958
Date of international filing May 6, 2011
Date of international publication Nov 10, 2011
Priority data
  • P2010-118857 (May 24, 2010) JP
  • P2010-107768 (May 7, 2010) JP
  • P2010-107764 (May 7, 2010) JP
Title PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD
Abstract A process for producing a functional device, comprising the following steps in this order: a functional solid material precursor layer formation step of applying a functional liquid material on a base material to form a layer of a precursor of a functional solid material (i.e., a precursor layer); a drying step of heating the precursor layer at a first temperature falling within the range from 80 to 250 deg.C to decrease the flowability of the precursor layer previously; an embossing step of embossing the precursor layer while heating the precursor layer at a second temperature falling within the range from 80 to 300 deg.C to form an embossed structure on the precursor layer; and a functional solid material layer formation step of heating the precursor layer at a third temperature that is higher than the second temperature to form a functional solid material layer from the precursor layer.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA, Tatsuya
  • TOKUMITSU, Eisuke
  • MIYASAKO, Takaaki
  • KANEDA, Toshihiko
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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