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Amorphous oxide and thin film transistor achieved

Foreign code F110005975
File No. E06015TW
Posted date Dec 14, 2011
Country Taiwan
Application number 94106027
Gazette No. 200534488
Gazette No. I336134
Date of filing Mar 1, 2005
Gazette Date Oct 16, 2005
Gazette Date Jan 11, 2011
Priority data
  • P2004-071477 (Mar 12, 2004) JP
  • P2004-325938 (Nov 10, 2004) JP
Title Amorphous oxide and thin film transistor achieved
Abstract To provide an amorphous oxide and thin film transistor using the same, especially, an amorphous oxide having electron carrier concentration less than 10< SP> 18< /SP> /cm< SP> 3< /SP> and thin film transistor using the same. Using an amorphous oxide having electron carrier concentration less than 10< SP> 18< /SP> /cm< SP> 3< /SP> as channeling layer on the thin film transistor comprised of source electrode 6, drain electode 5, gate electrode 4, gate insulation film 3 and channeling layer 2.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • HOSONO HIDEO,
  • HIRANO MASAHIRO,
  • OTA HIROMICHI,
  • KAMIYA TOSHIO,
  • NOMIRA KENJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
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