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Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) 実績あり

外国特許コード F120006161
整理番号 E06714US2
掲載日 2012年1月26日
出願国 アメリカ合衆国
出願番号 87011507
公報番号 20080026502
公報番号 8097481
出願日 平成19年10月10日(2007.10.10)
公報発行日 平成20年1月31日(2008.1.31)
公報発行日 平成24年1月17日(2012.1.17)
優先権データ
  • 2005US-60685908 (2005.5.31) US
  • 2006US-11444083 (2006.5.31) US
発明の名称 (英語) Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) 実績あり
発明の概要(英語) (US8097481)
A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD).
The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
特許請求の範囲(英語) [claim1]
1. A method of growing a non-polar m-plane III-nitride film, comprising: (a) growing an initial non-polar m-plane III-nitride film on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), wherein a top surface of the initial non-polar m-plane III-nitride film is a planar m-plane of III-nitride including an area having with a root mean square surface roughness of not more than 2.54 nanometers at least for an area of 5 micrometers by 5 micrometers.
[claim2]
2. The method of claim 1, wherein the substrate comprises a SiC-substrate.
[claim3]
3. The method of claim 1, wherein the non-polar m-plane III-nitride film comprises GaN, AlN, AlGaN or InGaN.
[claim4]
4. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane III-nitride film on the nucleation layer.
[claim5]
5. The method of claim 4, wherein the nucleation layer comprises aluminum nitride (AlN).
[claim6]
6. The method of claim 1, wherein the growing step comprises the steps of: (1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;
(2) annealing the substrate after performing the solvent clean and acid dip;
(3) growing a nucleation layer on the substrate after the annealing step; and
(4) growing an epitaxial layer of the non polar m-plane III-nitride film on the nucleation layer.
[claim7]
7. The method of claim 1, wherein the substrate is a GaN substrate.
[claim8]
8. The method of claim 1, wherein the growing is such that the film is sufficiently thick to be free-standing.
[claim9]
9. The method of claim 1, wherein the substrate is a LiGaO2 or LiAlO2 substrate.
[claim10]
10. The method of claim 1, wherein the growing is such that individual grains of the film are not distinguishable based on height measurements.
[claim11]
11. The method of claim 1, wherein the top surface results from predominantly stepped growth.
[claim12]
12. A device, wafer, substrate or template fabricated using the method of claim 1.
  • 発明者/出願人(英語)
  • IMER BILGE M
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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