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Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) achieved

Foreign code F120006161
File No. E06714US2
Posted date Jan 26, 2012
Country United States of America
Application number 87011507
Gazette No. 20080026502
Gazette No. 8097481
Date of filing Oct 10, 2007
Gazette Date Jan 31, 2008
Gazette Date Jan 17, 2012
Priority data
  • 2005US-60685908 (May 31, 2005) US
  • 2006US-11444083 (May 31, 2006) US
Title Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) achieved
Abstract (US8097481)
A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD).
The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
Scope of claims [claim1]
1. A method of growing a non-polar m-plane III-nitride film, comprising: (a) growing an initial non-polar m-plane III-nitride film on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), wherein a top surface of the initial non-polar m-plane III-nitride film is a planar m-plane of III-nitride including an area having with a root mean square surface roughness of not more than 2.54 nanometers at least for an area of 5 micrometers by 5 micrometers.
[claim2]
2. The method of claim 1, wherein the substrate comprises a SiC-substrate.
[claim3]
3. The method of claim 1, wherein the non-polar m-plane III-nitride film comprises GaN, AlN, AlGaN or InGaN.
[claim4]
4. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane III-nitride film on the nucleation layer.
[claim5]
5. The method of claim 4, wherein the nucleation layer comprises aluminum nitride (AlN).
[claim6]
6. The method of claim 1, wherein the growing step comprises the steps of: (1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;
(2) annealing the substrate after performing the solvent clean and acid dip;
(3) growing a nucleation layer on the substrate after the annealing step; and
(4) growing an epitaxial layer of the non polar m-plane III-nitride film on the nucleation layer.
[claim7]
7. The method of claim 1, wherein the substrate is a GaN substrate.
[claim8]
8. The method of claim 1, wherein the growing is such that the film is sufficiently thick to be free-standing.
[claim9]
9. The method of claim 1, wherein the substrate is a LiGaO2 or LiAlO2 substrate.
[claim10]
10. The method of claim 1, wherein the growing is such that individual grains of the film are not distinguishable based on height measurements.
[claim11]
11. The method of claim 1, wherein the top surface results from predominantly stepped growth.
[claim12]
12. A device, wafer, substrate or template fabricated using the method of claim 1.
  • Inventor, and Inventor/Applicant
  • IMER BILGE M
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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