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Spin-polarized electron source

外国特許コード F120006227
掲載日 2012年2月14日
出願国 アメリカ合衆国
出願番号 73627009
公報番号 20110089397
公報番号 8344354
出願日 平成21年3月24日(2009.3.24)
公報発行日 平成23年4月21日(2011.4.21)
公報発行日 平成25年1月1日(2013.1.1)
国際出願番号 JP2009001304
国際公開番号 WO2009119074
国際出願日 平成21年3月24日(2009.3.24)
国際公開日 平成21年10月1日(2009.10.1)
優先権データ
  • 特願2008-079292 (2008.3.25) JP
  • 2009WO-JP01304 (2009.3.24) WO
発明の名称 (英語) Spin-polarized electron source
発明の概要(英語) (US8344354)
A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer.
The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.
特許請求の範囲(英語) [claim1]
1. A spin-polarized electron generating device comprising: a substrate;
a buffer layer;
a strained superlattice layer formed on the buffer layer; and
an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer,
wherein the buffer layer comprises cracks formed in a direction perpendicular to the substrate by tensile strain.
[claim2]
2. A spin-polarized electron generating device according to claim 1, wherein the intermediate layer has a thickness equal to or greater than a critical film thickness.
[claim3]
3. A spin-polarized electron generating device according to claim 1, wherein the intermediate layer has a thickness so as not to be strained from the buffer layer when tensile strain imposed on the buffer layer is relaxed.
[claim4]
4. A spin-polarized electron generating device according to of claim 2, wherein the intermediate layer has a thickness so as not to be strained from the buffer layer when tensile strain imposed on the buffer layer is relaxed.
[claim5]
5. A spin-polarized electron generating device according to claim 1, wherein the spin-polarized electron generating device is configured such that the strained superlattice layer is irradiated with excitation light from a back side of the substrate, and the intermediate layer has such a thickness as to allow passage of 50% to 100% of the excitation light.
[claim6]
6. A spin-polarized electron generating device according to claim 1, wherein the substrate is formed of GaP; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x, (0 <= x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim7]
7. A spin-polarized electron generating device according to claim 2, wherein the substrate is formed of GaP; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x(0x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim8]
8. A spin-polarized electron generating device according to claim 6, wherein the intermediate layer is formed of GaAs.
[claim9]
9. A spin-polarized electron generating device according to claim 1, wherein the substrate is formed of GaAs; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x (0x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim10]
10. A spin-polarized electron generating device according to claim 2, wherein the substrate is formed of GaAs; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x (0 <= x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim11]
11. A spin-polarized electron generating device according to claim 9, wherein the intermediate layer is formed of InAs.
[claim12]
12. A spin-polarized electron generating device according to claim 1, wherein the substrate is formed of GaN; the buffer layer is formed of any one selected from a group consisting of AlxGa1-xN (0 <= x <= 1) and GayIn1-yN (0 <= y <= 1); and the intermediate layer is formed of a binary, ternary, or quaternary compound AlGaInN having a lattice constant greater than that of the buffer layer.
[claim13]
13. A spin-polarized electron generating device according to claim 2, wherein the substrate is formed of GaN; the buffer layer is formed of any one selected from a group consisting of AlxGa1-xN (0 <= x <= 1) and GayIn1-yN (0 <= y <= 1); and the intermediate layer is formed of a binary, ternary, or quaternary compound AlGaInN having a lattice constant greater than that of the buffer layer.
[claim14]
14. A spin-polarized electron generating device according to claim 12, wherein the intermediate layer is formed of InN.
[claim15]
15. A spin-polarized electron generating apparatus using a spin-polarized electron generating device according to claim 1.
[claim16]
16. A spin-polarized electron generating apparatus according to claim 15, wherein the spin-polarized electron generating apparatus is an electron microscope which uses the spin-polarized electron generating device as a spin-polarized electron generating device.
[claim17]
17. A spin-polarized electron generating device according to claim 1, wherein the cracks in the buffer layer are formed in a direction perpendicular to a surface of the substrate.
  • 発明者/出願人(英語)
  • UJIHARA TORU
  • JIN XIUGUANG
  • TAKEDA YOSHIKAZU
  • NAKANISHI TSUTOMU
  • YAMAMOTO NAOTO
  • SAKA TAKASHI
  • KATO TOSHIHIRO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • G21K001/16
  • H01J001/34
  • H01J037/06
  • T01J203/02S
  • T01J237/063D1
  • T01J237/063S
  • T01J237/245A4
  • T01J237/26
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