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Spin-polarized electron source

Foreign code F120006227
File No. J1018-02WO
Posted date Feb 14, 2012
Country United States of America
Application number 73627009
Gazette No. 20110089397
Gazette No. 8344354
Date of filing Mar 24, 2009
Gazette Date Apr 21, 2011
Gazette Date Jan 1, 2013
International application number JP2009001304
International publication number WO2009119074
Date of international filing Mar 24, 2009
Date of international publication Oct 1, 2009
Priority data
  • P2008-079292 (Mar 25, 2008) JP
  • 2009WO-JP01304 (Mar 24, 2009) WO
Title Spin-polarized electron source
Abstract (US8344354)
A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer.
The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.
Scope of claims [claim1]
1. A spin-polarized electron generating device comprising: a substrate;
a buffer layer;
a strained superlattice layer formed on the buffer layer; and
an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer,
wherein the buffer layer comprises cracks formed in a direction perpendicular to the substrate by tensile strain.
[claim2]
2. A spin-polarized electron generating device according to claim 1, wherein the intermediate layer has a thickness equal to or greater than a critical film thickness.
[claim3]
3. A spin-polarized electron generating device according to claim 1, wherein the intermediate layer has a thickness so as not to be strained from the buffer layer when tensile strain imposed on the buffer layer is relaxed.
[claim4]
4. A spin-polarized electron generating device according to of claim 2, wherein the intermediate layer has a thickness so as not to be strained from the buffer layer when tensile strain imposed on the buffer layer is relaxed.
[claim5]
5. A spin-polarized electron generating device according to claim 1, wherein the spin-polarized electron generating device is configured such that the strained superlattice layer is irradiated with excitation light from a back side of the substrate, and the intermediate layer has such a thickness as to allow passage of 50% to 100% of the excitation light.
[claim6]
6. A spin-polarized electron generating device according to claim 1, wherein the substrate is formed of GaP; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x, (0 <= x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim7]
7. A spin-polarized electron generating device according to claim 2, wherein the substrate is formed of GaP; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x(0x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim8]
8. A spin-polarized electron generating device according to claim 6, wherein the intermediate layer is formed of GaAs.
[claim9]
9. A spin-polarized electron generating device according to claim 1, wherein the substrate is formed of GaAs; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x (0x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim10]
10. A spin-polarized electron generating device according to claim 2, wherein the substrate is formed of GaAs; the buffer layer is formed of any one selected from a group consisting of GaAsxP1-x (0 <= x <= 1), GayIn1-yP (0 <= y <= 1), and GazIn1-zAs (0 <= z <= 1); and the intermediate layer is formed of a binary, ternary, quaternary, or quinary compound AlGaInAsP having a lattice constant greater than that of the buffer layer.
[claim11]
11. A spin-polarized electron generating device according to claim 9, wherein the intermediate layer is formed of InAs.
[claim12]
12. A spin-polarized electron generating device according to claim 1, wherein the substrate is formed of GaN; the buffer layer is formed of any one selected from a group consisting of AlxGa1-xN (0 <= x <= 1) and GayIn1-yN (0 <= y <= 1); and the intermediate layer is formed of a binary, ternary, or quaternary compound AlGaInN having a lattice constant greater than that of the buffer layer.
[claim13]
13. A spin-polarized electron generating device according to claim 2, wherein the substrate is formed of GaN; the buffer layer is formed of any one selected from a group consisting of AlxGa1-xN (0 <= x <= 1) and GayIn1-yN (0 <= y <= 1); and the intermediate layer is formed of a binary, ternary, or quaternary compound AlGaInN having a lattice constant greater than that of the buffer layer.
[claim14]
14. A spin-polarized electron generating device according to claim 12, wherein the intermediate layer is formed of InN.
[claim15]
15. A spin-polarized electron generating apparatus using a spin-polarized electron generating device according to claim 1.
[claim16]
16. A spin-polarized electron generating apparatus according to claim 15, wherein the spin-polarized electron generating apparatus is an electron microscope which uses the spin-polarized electron generating device as a spin-polarized electron generating device.
[claim17]
17. A spin-polarized electron generating device according to claim 1, wherein the cracks in the buffer layer are formed in a direction perpendicular to a surface of the substrate.
  • Inventor, and Inventor/Applicant
  • UJIHARA TORU
  • JIN XIUGUANG
  • TAKEDA YOSHIKAZU
  • NAKANISHI TSUTOMU
  • YAMAMOTO NAOTO
  • SAKA TAKASHI
  • KATO TOSHIHIRO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
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