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Miscut semipolar optoelectronic device

外国特許コード F120006236
整理番号 E06725US2
掲載日 2012年2月14日
出願国 アメリカ合衆国
出願番号 71018110
公報番号 20100148195
公報番号 8110482
出願日 平成22年2月22日(2010.2.22)
公報発行日 平成22年6月17日(2010.6.17)
公報発行日 平成24年2月7日(2012.2.7)
優先権データ
  • 2006US-60760739 (2006.1.20) US
  • 2007US-11655573 (2007.1.19) US
発明の名称 (英語) Miscut semipolar optoelectronic device
発明の概要(英語) (US8110482)
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate.
Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
特許請求の範囲(英語) [claim1]
1. A semiconductor film, comprising: a semipolar nitride semiconductor film deposited on a miscut surface of a substrate, wherein a top surface of the semipolar nitride semiconductor film is more than 10 microns wide and is substantially parallel to the miscut surface of the substrate.
[claim2]
2. The film of claim 1, wherein the miscut surface of the substrate is miscut away from a low index crystal orientation.
[claim3]
3. The film of claim 2, wherein the miscut has a magnitude and direction.
[claim4]
4. The film of claim 3, wherein the magnitude of the miscut is a miscut angle that ranges from 0.5 deg.-20 deg..
[claim5]
5. The film of claim 4, wherein the magnitude of the miscut is a miscut angle that varies from 0.5 deg.-3 deg..
[claim6]
6. The film of claim 1, wherein the substrate is miscut in a given crystallographic direction, thereby forming the miscut surface of the substrate that lowers a symmetry of the substrate to match a symmetry of the semipolar nitride semiconductor film.
[claim7]
7. The film of claim 6, wherein the semipolar nitride semiconductor film contains a single crystallographic domain.
[claim8]
8. The film of claim 1, wherein the semipolar nitride semiconductor film is deposited heteroepitaxially on the substrate and the semipolar nitride semiconductor film has lower symmetry than a symmetry of the substrate.
[claim9]
9. The film of claim 1, wherein the semipolar nitride semiconductor film comprises an alloy composition of (Ga,Al,In,B)N semiconductors having a formula of GanAlxInyBzN where 0 <= n <= 1, 0 <= x <= 1, 0 <= y <= 1, 0 <= z <= 1 and n+x+y+z=1.
[claim10]
10. The film of claim 1, wherein the semipolar nitride semiconductor film is a {10-11} nitride and the substrate is a {100} MgAl2O4 spinel substrate miscut in the <011> direction.
[claim11]
11. The film of claim 1, wherein the semipolar nitride semiconductor film is a {11-22} nitride and the substrate is a {1-100} Al2O3 sapphire substrate miscut in the <0001> direction.
[claim12]
12. The film of claim 1, wherein the substrate is a bulk nitride crystal having the miscut surface along a semipolar plane and the semipolar nitride semiconductor film is homoepitaxially grown on the miscut surface of the substrate.
[claim13]
13. The film of claim 12, wherein the miscut surface comprises a Nitrogen (N) face.
[claim14]
14. The film of claim 1, wherein the miscut surface of the substrate provides step edges or kinks that serve as preferential nucleation sites for growth of the semipolar nitride semiconductor film.
[claim15]
15. The film of claim 14, wherein miscut surface provides reduced defect densities or smoother, more planar interfaces or surfaces of the semipolar nitride semiconductor film, as compared to deposition of a similar semipolar nitride semiconductor film on non-miscut surfaces of substrates under similar deposition conditions.
[claim16]
16. The film of claim 1, wherein the miscut surface is such that the semipolar nitride semiconductor film deposited on the miscut surface of the substrate has better crystallinity and reduced threading dislocations as compared to a similar semipolar nitride semiconductor film deposited on non-miscut surfaces of substrates under similar deposition conditions.
[claim17]
17. The film of claim 1, wherein the film is part of a device, and the device is a light emitting device having a brighter emission than a similar device fabricated on a non-miscut surface of a substrate.
[claim18]
18. The film of claim 1, wherein the semipolar nitride semiconductor film deposited heteroepitaxially on the miscut surface of the substrate and the substrate is a different material from gallium nitride.
[claim19]
19. A method of fabricating a semiconductor film, comprising: depositing a semipolar nitride semiconductor film on a miscut surface of a substrate, wherein a top surface of the semipolar nitride semiconductor film is more than 10 microns wide and is substantially parallel to the miscut surface of the substrate.
[claim20]
20. The method of claim 19, further comprising: (1) miscutting the substrate;
(2) loading the substrate into a reactor;
(3) heating the substrate under a flow comprising at least one of nitrogen, hydrogen or ammonia;
(4) depositing the semipolar nitride semiconductor film on the heated substrate; and
(5) cooling the substrate under a nitrogen overpressure.
[claim21]
21. The method of claim 20, wherein the depositing step (4) comprises: (i) depositing a nucleation layer on the heated substrate; and
(ii) depositing the semipolar nitride semiconductor film on the nucleation layer.
[claim22]
22. The method of claim 19, wherein the miscut surface of the substrate is miscut away from a low index crystal orientation.
[claim23]
23. The method of claim 22, wherein the miscut has a magnitude and a direction, and the magnitude of the miscut is a miscut angle that ranges from 0.5 deg.-20 deg..
[claim24]
24. The method of claim 23, wherein the magnitude of the miscut is a miscut angle that varies from 0.5 deg.-3 deg..
[claim25]
25. The method of claim 19, wherein the substrate is miscut in a given crystallographic direction, thereby forming the miscut surface of the substrate that lowers a symmetry of the substrate to match a symmetry of the semipolar nitride semiconductor film.
[claim26]
26. The method of claim 25, wherein the semipolar nitride semiconductor film contains a single crystallographic domain.
[claim27]
27. The method of claim 19, wherein the semipolar nitride semiconductor film is deposited heteroepitaxially on the substrate and the semipolar nitride semiconductor film has lower symmetry than a symmetry of the substrate.
[claim28]
28. The method of claim 19, wherein the semipolar nitride semiconductor film comprises an alloy composition of (Ga,Al,In,B)N semiconductors having a formula of GanAlxInyBzN where 0 <= n <= 1, 0 <= x <= 1, 0 <= y <= 1, 0 <= z <= 1 and n+x+y+z=1.
[claim29]
29. The method of claim 19, wherein the semipolar nitride semiconductor film is a {10-11} nitride and the substrate is a {100} MgAl2O4 spinel substrate miscut in the <011> direction.
[claim30]
30. The method of claim 19, wherein the semipolar nitride semiconductor film is a {11-22} nitride and the substrate is a {1-100} Al2O3 sapphire substrate miscut in the <0001> direction.
[claim31]
31. The method of claim 19, wherein the substrate is a bulk nitride crystal having the miscut surface along a semipolar plane and the semipolar nitride semiconductor film is homoepitaxially grown on the miscut surface of the substrate.
[claim32]
32. The method of claim 31, wherein the miscut surface comprises a Nitrogen (N) face.
[claim33]
33. The method of claim 19, wherein the miscut surface of the substrate provides step edges or kinks that serve as preferential nucleation sites for growth of the semipolar nitride semiconductor film.
[claim34]
34. The method of claim 33, further comprising selecting the miscut surface that provides reduced defect densities or smoother, more planar interfaces or surfaces of the semipolar nitride semiconductor film, as compared to deposition of a similar semipolar nitride semiconductor film on non-miscut surfaces of substrates under similar deposition conditions.
[claim35]
35. The method of claim 19, further comprising selecting the miscut surface such that the semipolar nitride semiconductor film deposited on the miscut surface of the substrate has better crystallinity and reduced threading dislocations as compared to a similar semipolar nitride semiconductor film deposited on non-miscut surfaces of substrates under similar deposition conditions.
[claim36]
36. The method of claim 19, wherein the semiconductor nitride film is part of a device, and the device is a light emitting device having a brighter emission than a similar device fabricated on a non-miscut surface of a substrate.
[claim37]
37. The method of claim 36, further comprising controlling a relative orientation of a total polarization field in the device by controlling a miscut angle of the miscut surface of the substrate.
[claim38]
38. The method of claim 19, wherein the semipolar nitride semiconductor film is deposited heteroepitaxially on the miscut surface of the substrate and the substrate is a different material from gallium nitride.
  • 発明者/出願人(英語)
  • KAEDING JOHN F
  • LEE DONG-SEON
  • IZA MICHAEL
  • BAKER TROY J
  • SATO HITOSHI
  • HASKELL BENJAMIN A
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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