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Method for growing group III-nitride crystals in supercritical ammonia using an autoclave 実績あり

外国特許コード F120006301
整理番号 E06710WO
掲載日 2012年3月12日
出願国 アメリカ合衆国
出願番号 92139605
公報番号 20100158785
公報番号 8709371
出願日 平成17年7月8日(2005.7.8)
公報発行日 平成22年6月24日(2010.6.24)
公報発行日 平成26年4月29日(2014.4.29)
国際出願番号 US2005024239
国際公開番号 WO2007008198
国際出願日 平成17年7月8日(2005.7.8)
国際公開日 平成19年1月18日(2007.1.18)
優先権データ
  • 2005WO-US24239 (2005.7.8) WO
発明の名称 (英語) Method for growing group III-nitride crystals in supercritical ammonia using an autoclave 実績あり
発明の概要(英語) (US8709371)
A method of growing high-quality, group-III nitride, bulk single crystals.
The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal.
The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C.
The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.
特許請求の範囲(英語) [claim1]
1. A method for growing group III-nitride crystals, comprising: (a) loading source materials and seed crystals into a reaction vessel, wherein part or all of the source materials are prepared by a recycling process for a nutrient used in a previous ammonothermal process or fragments of the group III-nitride crystals grown in the previous ammonothermal process and the recycling process includes annealing the nutrients or the fragments at more than 600 deg. C. in a reducing environment;
(b) filling the reaction vessel with ammonia; and
(c) raising the reaction vessel's temperature to attain a supercritical state for the ammonia wherein convection of the supercritical ammonia transfers the source materials and deposits the transferred source materials onto the seed crystals.
[claim2]
2. The method of claim 1, wherein the source materials have a grain size of at least 10 microns.
[claim3]
3. The method of claim 1, wherein the source materials are a group-III nitride polycrystals.
[claim4]
4. The method of claim 3, wherein the group III-nitride polycrystals are synthesized from group III halides.
[claim5]
5. The method of claim 4, wherein the group III-nitride is GaN.
[claim6]
6. The method of claim 1, wherein the source materials are a group-III metal.
[claim7]
7. The method of claim 1, wherein the source materials are a mixture of group-III metal and group-III nitride polycrystals.
[claim8]
8. The method of claim 7, wherein the group III-nitride is GaN.
[claim9]
9. The method of claim 1, wherein the seed crystals are group-III nitride crystals.
[claim10]
10. The method of claim 1, wherein the reducing environment contains hydrogen or ammonia.
[claim11]
11. The method of claim 1, wherein the reaction vessel has longer dimension along the vertical direction, the reaction vessel is divided into a top region and a bottom region with a baffle plate therebetween, the source materials and seed crystals are placed in separate ones of the top and bottom regions, and the top region is kept at a different temperature than the bottom region.
[claim12]
12. The method of claim 1, wherein the source materials are held in a mesh basket and the mesh basket is made of Ni or Ni-based alloy that contains at least 30% of Ni.
[claim13]
13. The method of claim 1, wherein undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals during the convection of the supercritical ammonia.
[claim14]
14. A method for growing group III-nitride crystals, comprising: (a) loading source materials and seed crystals into a reaction vessel;
(b) filling an internal chamber of the reaction vessel with ammonia;
(c) raising the reaction vessel's temperature to attain a supercritical state for the ammonia, wherein convection of the supercritical ammonia transfers the source materials and deposits the transferred source materials onto the seed crystals; and
(d) releasing the ammonia from the internal chamber into the reaction vessel, when the ammonia attains the supercritical state, such that the released ammonia fills a space between the internal chamber's outer walls and the reaction vessel's inner walls, to balance the pressure between inside and outside of the internal chamber.
[claim15]
15. The method of claim 14, wherein the source materials are held in a mesh basket and the mesh basket is made of Ni or Ni-based alloy that contains at least 30% of Ni.
  • 発明者/出願人(英語)
  • FUJITO KENJI
  • HASHIMOTO TADAO
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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