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Method for growing group III-nitride crystals in supercritical ammonia using an autoclave achieved

Foreign code F120006301
File No. E06710WO
Posted date Mar 12, 2012
Country United States of America
Application number 92139605
Gazette No. 20100158785
Gazette No. 8709371
Date of filing Jul 8, 2005
Gazette Date Jun 24, 2010
Gazette Date Apr 29, 2014
International application number US2005024239
International publication number WO2007008198
Date of international filing Jul 8, 2005
Date of international publication Jan 18, 2007
Priority data
  • 2005WO-US24239 (Jul 8, 2005) WO
Title Method for growing group III-nitride crystals in supercritical ammonia using an autoclave achieved
Abstract (US8709371)
A method of growing high-quality, group-III nitride, bulk single crystals.
The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal.
The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C.
The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.
Scope of claims [claim1]
1. A method for growing group III-nitride crystals, comprising: (a) loading source materials and seed crystals into a reaction vessel, wherein part or all of the source materials are prepared by a recycling process for a nutrient used in a previous ammonothermal process or fragments of the group III-nitride crystals grown in the previous ammonothermal process and the recycling process includes annealing the nutrients or the fragments at more than 600 deg. C. in a reducing environment;
(b) filling the reaction vessel with ammonia; and
(c) raising the reaction vessel's temperature to attain a supercritical state for the ammonia wherein convection of the supercritical ammonia transfers the source materials and deposits the transferred source materials onto the seed crystals.
[claim2]
2. The method of claim 1, wherein the source materials have a grain size of at least 10 microns.
[claim3]
3. The method of claim 1, wherein the source materials are a group-III nitride polycrystals.
[claim4]
4. The method of claim 3, wherein the group III-nitride polycrystals are synthesized from group III halides.
[claim5]
5. The method of claim 4, wherein the group III-nitride is GaN.
[claim6]
6. The method of claim 1, wherein the source materials are a group-III metal.
[claim7]
7. The method of claim 1, wherein the source materials are a mixture of group-III metal and group-III nitride polycrystals.
[claim8]
8. The method of claim 7, wherein the group III-nitride is GaN.
[claim9]
9. The method of claim 1, wherein the seed crystals are group-III nitride crystals.
[claim10]
10. The method of claim 1, wherein the reducing environment contains hydrogen or ammonia.
[claim11]
11. The method of claim 1, wherein the reaction vessel has longer dimension along the vertical direction, the reaction vessel is divided into a top region and a bottom region with a baffle plate therebetween, the source materials and seed crystals are placed in separate ones of the top and bottom regions, and the top region is kept at a different temperature than the bottom region.
[claim12]
12. The method of claim 1, wherein the source materials are held in a mesh basket and the mesh basket is made of Ni or Ni-based alloy that contains at least 30% of Ni.
[claim13]
13. The method of claim 1, wherein undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals during the convection of the supercritical ammonia.
[claim14]
14. A method for growing group III-nitride crystals, comprising: (a) loading source materials and seed crystals into a reaction vessel;
(b) filling an internal chamber of the reaction vessel with ammonia;
(c) raising the reaction vessel's temperature to attain a supercritical state for the ammonia, wherein convection of the supercritical ammonia transfers the source materials and deposits the transferred source materials onto the seed crystals; and
(d) releasing the ammonia from the internal chamber into the reaction vessel, when the ammonia attains the supercritical state, such that the released ammonia fills a space between the internal chamber's outer walls and the reaction vessel's inner walls, to balance the pressure between inside and outside of the internal chamber.
[claim15]
15. The method of claim 14, wherein the source materials are held in a mesh basket and the mesh basket is made of Ni or Ni-based alloy that contains at least 30% of Ni.
  • Inventor, and Inventor/Applicant
  • FUJITO KENJI
  • HASHIMOTO TADAO
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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