Technique for the growth of planar semi-polar gallium nitride
| 外国特許コード | F120006302 |
|---|---|
| 整理番号 | E06712US3 |
| 掲載日 | 2012年3月12日 |
| 出願国 | アメリカ合衆国 |
| 出願番号 | 69796110 |
| 公報番号 | 20100133663 |
| 公報番号 | 8128756 |
| 出願日 | 平成22年2月1日(2010.2.1) |
| 公報発行日 | 平成22年6月3日(2010.6.3) |
| 公報発行日 | 平成24年3月6日(2012.3.6) |
| 優先権データ |
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| 発明の名称 （英語） |
Technique for the growth of planar semi-polar gallium nitride
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| 発明の概要（英語） |
(US8128756) A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate. |
| 特許請求の範囲（英語） |
[claim1] 1. A nitride film, comprising: a semi-polar nitride film grown on a semi-polar plane of a substrate, such that a surface of the semi-polar nitride film is planar and parallel to a surface of the semi-polar plane of the substrate. [claim2] 9. A method for growing a nitride film, comprising: growing a semi-polar nitride film on a semi-polar plane of a substrate, such that a surface of the semi-polar nitride film is planar and parallel to a surface of the semi-polar plane of the substrate. [claim3] 2. The film of claim 1, wherein the semi-polar film reduces polarization in device layers grown on the semi-polar film as compared to device layers grown on a c-plane polar nitride film, the polarization resulting from the device layers and the films having dissimilar compositions and therefore different lattice constants. [claim4] 3. The film of claim 1, wherein the semi-polar nitride film is a {10-11} nitride, {10-13} nitride, {10-14} nitride, {11-22} nitride, or {20-21} nitride. [claim5] 4. The film of claim 1, wherein the substrate is a {100} substrate miscut in a specific direction to create the surface of the semi-polar plane of the substrate, and the specific direction comprises a <001>, <010> or <011> direction. [claim6] 5. The film of claim 1, wherein the semi-polar nitride film is a {10-11} nitride grown on a (100) spinel substrate miscut in a specific direction, and the specific direction comprises a <001>, <010> or <011> direction. [claim7] 6. The film of claim 1, wherein the semi-polar nitride film is a {10-13} nitride grown on a {110} spinel substrate. [claim8] 7. The film of claim 1, wherein the semi-polar nitride film is a {10-13} nitride grown on a {1-100} sapphire substrate. [claim9] 8. The film of claim 1, wherein the semi-polar nitride film is a {11-22} nitride grown on a {1-100} sapphire substrate. [claim10] 10. The method of claim 9, wherein the semi-polar film reduces polarization in device layers grown on the semi-polar film as compared to device layers grown on a c-plane polar nitride film, the polarization resulting from the device layers and the films having dissimilar compositions and therefore different lattice constants. [claim11] 11. The method of claim 9, wherein the semi-polar nitride film is a {10-11} nitride, {10-13} nitride, {10-14} nitride, {11-22} nitride, or {20-21} nitride. [claim12] 12. The method of claim 9, wherein the substrate is a {100} substrate miscut in a specific direction to create the surface of the semi-polar plane of the substrate, and the specific direction comprises a <001>, <010>or <011> direction. [claim13] 13. The method of claim 9, wherein the semi-polar nitride film is a {10-11} nitride grown on a (100) spinel substrate miscut in a specific directions, and the specific direction comprises a <001>, <010> or <011>direction. [claim14] 14. The method of claim 9, wherein the semi-polar nitride film is a {10-13} nitride grown on a {110} spinel substrate. [claim15] 15. The method of claim 9, wherein the semi-polar nitride film is a {10-13} nitride grown on a {1-100} sapphire substrate. [claim16] 16. The method of claim 9, wherein the semi-polar nitride film is a {11-22} nitride grown on a {1-100} sapphire substrate. |
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| 国際特許分類(IPC) | |
| 参考情報 （研究プロジェクト等） | ERATO NAKAMURA Inhomogeneous Crystal AREA |
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