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Technique for the growth of planar semi-polar gallium nitride UPDATE 実績あり

外国特許コード F120006302
整理番号 E06712US3
掲載日 2012年3月12日
出願国 アメリカ合衆国
出願番号 69796110
公報番号 20100133663
公報番号 8128756
出願日 平成22年2月1日(2010.2.1)
公報発行日 平成22年6月3日(2010.6.3)
公報発行日 平成24年3月6日(2012.3.6)
優先権データ
  • 2005US-60660283 (2005.3.10) US
  • 2006US-11372914 (2006.3.10) US
  • 2007US-11621482 (2007.1.9) US
発明の名称 （英語） Technique for the growth of planar semi-polar gallium nitride UPDATE 実績あり
発明の概要（英語） (US8128756)
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.
The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
特許請求の範囲（英語） [claim1]
1. A nitride film, comprising: a semi-polar nitride film grown on a semi-polar plane of a substrate, such that a surface of the semi-polar nitride film is planar and parallel to a surface of the semi-polar plane of the substrate.
[claim2]
9. A method for growing a nitride film, comprising: growing a semi-polar nitride film on a semi-polar plane of a substrate, such that a surface of the semi-polar nitride film is planar and parallel to a surface of the semi-polar plane of the substrate.
[claim3]
2. The film of claim 1, wherein the semi-polar film reduces polarization in device layers grown on the semi-polar film as compared to device layers grown on a c-plane polar nitride film, the polarization resulting from the device layers and the films having dissimilar compositions and therefore different lattice constants.
[claim4]
3. The film of claim 1, wherein the semi-polar nitride film is a {10-11} nitride, {10-13} nitride, {10-14} nitride, {11-22} nitride, or {20-21} nitride.
[claim5]
4. The film of claim 1, wherein the substrate is a {100} substrate miscut in a specific direction to create the surface of the semi-polar plane of the substrate, and the specific direction comprises a <001>, <010> or <011> direction.
[claim6]
5. The film of claim 1, wherein the semi-polar nitride film is a {10-11} nitride grown on a (100) spinel substrate miscut in a specific direction, and the specific direction comprises a <001>, <010> or <011> direction.
[claim7]
6. The film of claim 1, wherein the semi-polar nitride film is a {10-13} nitride grown on a {110} spinel substrate.
[claim8]
7. The film of claim 1, wherein the semi-polar nitride film is a {10-13} nitride grown on a {1-100} sapphire substrate.
[claim9]
8. The film of claim 1, wherein the semi-polar nitride film is a {11-22} nitride grown on a {1-100} sapphire substrate.
[claim10]
10. The method of claim 9, wherein the semi-polar film reduces polarization in device layers grown on the semi-polar film as compared to device layers grown on a c-plane polar nitride film, the polarization resulting from the device layers and the films having dissimilar compositions and therefore different lattice constants.
[claim11]
11. The method of claim 9, wherein the semi-polar nitride film is a {10-11} nitride, {10-13} nitride, {10-14} nitride, {11-22} nitride, or {20-21} nitride.
[claim12]
12. The method of claim 9, wherein the substrate is a {100} substrate miscut in a specific direction to create the surface of the semi-polar plane of the substrate, and the specific direction comprises a <001>, <010>or <011> direction.
[claim13]
13. The method of claim 9, wherein the semi-polar nitride film is a {10-11} nitride grown on a (100) spinel substrate miscut in a specific directions, and the specific direction comprises a <001>, <010> or <011>direction.
[claim14]
14. The method of claim 9, wherein the semi-polar nitride film is a {10-13} nitride grown on a {110} spinel substrate.
[claim15]
15. The method of claim 9, wherein the semi-polar nitride film is a {10-13} nitride grown on a {1-100} sapphire substrate.
[claim16]
16. The method of claim 9, wherein the semi-polar nitride film is a {11-22} nitride grown on a {1-100} sapphire substrate.
  • 発明者/出願人（英語）
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMUA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
国際特許分類(IPC)
参考情報 （研究プロジェクト等） ERATO NAKAMURA Inhomogeneous Crystal AREA
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『 Technique for the growth of planar semi-polar gallium nitride 』に関するお問合せ


  • 国立研究開発法人科学技術振興機構（ＪＳＴ） 知的財産マネジメント推進部
  • URL: http://www.jst.go.jp/chizai/
  • E-mail: e-mail address
  • Address: 〒102-8666 東京都千代田区四番町5-3
  • TEL: 03-5214-8293
  • FAX: 03-5214-8476

お問合せ

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公報 20100133663(PDF,180KB) PDF
公報 8128756(PDF,214KB) PDF
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