Top > Search of International Patents > Technique for the growth of planar semi-polar gallium nitride

Technique for the growth of planar semi-polar gallium nitride achieved

Foreign code F120006302
File No. E06712US3
Posted date Mar 12, 2012
Country United States of America
Application number 69796110
Gazette No. 20100133663
Gazette No. 8128756
Date of filing Feb 1, 2010
Gazette Date Jun 3, 2010
Gazette Date Mar 6, 2012
Priority data
  • 2005US-60660283 (Mar 10, 2005) US
  • 2006US-11372914 (Mar 10, 2006) US
  • 2007US-11621482 (Jan 9, 2007) US
Title Technique for the growth of planar semi-polar gallium nitride achieved
Abstract (US8128756)
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.
The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
Scope of claims [claim1]
1. A nitride film, comprising: a semi-polar nitride film grown on a semi-polar plane of a substrate, such that a surface of the semi-polar nitride film is planar and parallel to a surface of the semi-polar plane of the substrate.
[claim2]
9. A method for growing a nitride film, comprising: growing a semi-polar nitride film on a semi-polar plane of a substrate, such that a surface of the semi-polar nitride film is planar and parallel to a surface of the semi-polar plane of the substrate.
[claim3]
2. The film of claim 1, wherein the semi-polar film reduces polarization in device layers grown on the semi-polar film as compared to device layers grown on a c-plane polar nitride film, the polarization resulting from the device layers and the films having dissimilar compositions and therefore different lattice constants.
[claim4]
3. The film of claim 1, wherein the semi-polar nitride film is a {10-11} nitride, {10-13} nitride, {10-14} nitride, {11-22} nitride, or {20-21} nitride.
[claim5]
4. The film of claim 1, wherein the substrate is a {100} substrate miscut in a specific direction to create the surface of the semi-polar plane of the substrate, and the specific direction comprises a <001>, <010> or <011> direction.
[claim6]
5. The film of claim 1, wherein the semi-polar nitride film is a {10-11} nitride grown on a (100) spinel substrate miscut in a specific direction, and the specific direction comprises a <001>, <010> or <011> direction.
[claim7]
6. The film of claim 1, wherein the semi-polar nitride film is a {10-13} nitride grown on a {110} spinel substrate.
[claim8]
7. The film of claim 1, wherein the semi-polar nitride film is a {10-13} nitride grown on a {1-100} sapphire substrate.
[claim9]
8. The film of claim 1, wherein the semi-polar nitride film is a {11-22} nitride grown on a {1-100} sapphire substrate.
[claim10]
10. The method of claim 9, wherein the semi-polar film reduces polarization in device layers grown on the semi-polar film as compared to device layers grown on a c-plane polar nitride film, the polarization resulting from the device layers and the films having dissimilar compositions and therefore different lattice constants.
[claim11]
11. The method of claim 9, wherein the semi-polar nitride film is a {10-11} nitride, {10-13} nitride, {10-14} nitride, {11-22} nitride, or {20-21} nitride.
[claim12]
12. The method of claim 9, wherein the substrate is a {100} substrate miscut in a specific direction to create the surface of the semi-polar plane of the substrate, and the specific direction comprises a <001>, <010>or <011> direction.
[claim13]
13. The method of claim 9, wherein the semi-polar nitride film is a {10-11} nitride grown on a (100) spinel substrate miscut in a specific directions, and the specific direction comprises a <001>, <010> or <011>direction.
[claim14]
14. The method of claim 9, wherein the semi-polar nitride film is a {10-13} nitride grown on a {110} spinel substrate.
[claim15]
15. The method of claim 9, wherein the semi-polar nitride film is a {10-13} nitride grown on a {1-100} sapphire substrate.
[claim16]
16. The method of claim 9, wherein the semi-polar nitride film is a {11-22} nitride grown on a {1-100} sapphire substrate.
  • Inventor, and Inventor/Applicant
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMUA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close