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Plasma generator, plasma control method and method of producing substrate UPDATE 実績あり

外国特許コード F120006337
整理番号 V312P005US1
掲載日 2012年3月22日
出願国 アメリカ合衆国
出願番号 83616110
公報番号 20100304046
公報番号 8444806
出願日 平成22年7月14日(2010.7.14)
公報発行日 平成22年12月2日(2010.12.2)
公報発行日 平成25年5月21日(2013.5.21)
国際出願番号 JP2003016007
国際公開番号 WO2004056159
国際出願日 平成15年12月12日(2003.12.12)
国際公開日 平成16年7月1日(2004.7.1)
優先権データ
  • 特願2002-363988 (2002.12.16) JP
  • 特願2002-363989 (2002.12.16) JP
  • 特願2003-014718 (2003.1.23) JP
  • 2003WO-JP16007 (2003.12.12) WO
  • 2005US-10539254 (2005.6.16) US
発明の名称 (英語) Plasma generator, plasma control method and method of producing substrate UPDATE 実績あり
発明の概要(英語) (US8444806)
The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma.
This object is achieved by the following construction.
Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor.
The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber.
Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber.
In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
特許請求の範囲(英語) [claim1]
1. A plasma generator comprising: a) a vacuum chamber;
b) a stage located within the vacuum chamber on which a base plate is to be placed; and
c) multiple U-shaped RF antennas arranged substantially parallel to the stage within the vacuum chamber,
wherein an aspect ratio of a U-shaped RF antenna directed to a center of the stage is larger than that of other U-shaped RF antennas while areas enclosed by conductors of the multiple U-shaped RF antennas are constant, the aspect ratio defined as a length of the RF antenna along a direction perpendicular to an inner wall divided by a length of the RF antenna along a direction parallel to the inner wall.
[claim2]
2. The plasma generator according to claim 1, wherein the RF antennas are attached on one or both of a sidewall and a ceiling wall of the vacuum chamber.
[claim3]
3. The plasma generator according to claim 1, wherein a surface of the RF antennas is coated with an insulator.
[claim4]
4. The plasma generator according to claim 1, wherein the shape of the RF antennas within the vacuum chamber is flat.
[claim5]
5. The plasma generator according to claim 1, wherein each of the multiple RF antennas are divided into groups each including one or more RF antennas, and a RF power is supplied to each RF antenna in parallel within each group.
[claim6]
6. A method of producing a substrate, wherein plasma of a material is generated by a plasma generator according to claim 1 and the material is deposited.
[claim7]
7. A method of producing a substrate, wherein an etching process is carried out using plasma generated by a plasma generator according to claim 1.
[claim8]
8. A plasma control method comprising: providing a plasma generator having multiple U-shaped RF antennas located within a vacuum chamber, said antennas being arranged on one or both of a sidewall and a ceiling wall of the vacuum chamber and substantially parallel to a stage on which a base plate is to be placed,
wherein an aspect ratio of a U-shaped RF antenna directed to a center of the stage is set to a larger value than that of other U-shaped RF antennas while areas enclosed by conductors of the multiple U-shaped RF antennas are constant, the aspect ratio defined as a length of the RF antenna along a direction perpendicular to an inner wall divided by a length of the RF antenna along a direction parallel to the inner wall.
  • 発明者/出願人(英語)
  • MIYAKE SHOJI
  • EBE AKINORI
  • SHOJI TATSUO
  • SETSUHARA YUICHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
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