Top > Search of International Patents > Plasma generator, plasma control method and method of producing substrate

Plasma generator, plasma control method and method of producing substrate achieved

Foreign code F120006337
File No. V312P005US1
Posted date Mar 22, 2012
Country United States of America
Application number 83616110
Gazette No. 20100304046
Gazette No. 8444806
Date of filing Jul 14, 2010
Gazette Date Dec 2, 2010
Gazette Date May 21, 2013
International application number JP2003016007
International publication number WO2004056159
Date of international filing Dec 12, 2003
Date of international publication Jul 1, 2004
Priority data
  • P2002-363988 (Dec 16, 2002) JP
  • P2002-363989 (Dec 16, 2002) JP
  • P2003-014718 (Jan 23, 2003) JP
  • 2003WO-JP16007 (Dec 12, 2003) WO
  • 2005US-10539254 (Jun 16, 2005) US
Title Plasma generator, plasma control method and method of producing substrate achieved
Abstract (US8444806)
The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma.
This object is achieved by the following construction.
Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor.
The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber.
Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber.
In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
Scope of claims [claim1]
1. A plasma generator comprising: a) a vacuum chamber;
b) a stage located within the vacuum chamber on which a base plate is to be placed; and
c) multiple U-shaped RF antennas arranged substantially parallel to the stage within the vacuum chamber,
wherein an aspect ratio of a U-shaped RF antenna directed to a center of the stage is larger than that of other U-shaped RF antennas while areas enclosed by conductors of the multiple U-shaped RF antennas are constant, the aspect ratio defined as a length of the RF antenna along a direction perpendicular to an inner wall divided by a length of the RF antenna along a direction parallel to the inner wall.
[claim2]
2. The plasma generator according to claim 1, wherein the RF antennas are attached on one or both of a sidewall and a ceiling wall of the vacuum chamber.
[claim3]
3. The plasma generator according to claim 1, wherein a surface of the RF antennas is coated with an insulator.
[claim4]
4. The plasma generator according to claim 1, wherein the shape of the RF antennas within the vacuum chamber is flat.
[claim5]
5. The plasma generator according to claim 1, wherein each of the multiple RF antennas are divided into groups each including one or more RF antennas, and a RF power is supplied to each RF antenna in parallel within each group.
[claim6]
6. A method of producing a substrate, wherein plasma of a material is generated by a plasma generator according to claim 1 and the material is deposited.
[claim7]
7. A method of producing a substrate, wherein an etching process is carried out using plasma generated by a plasma generator according to claim 1.
[claim8]
8. A plasma control method comprising: providing a plasma generator having multiple U-shaped RF antennas located within a vacuum chamber, said antennas being arranged on one or both of a sidewall and a ceiling wall of the vacuum chamber and substantially parallel to a stage on which a base plate is to be placed,
wherein an aspect ratio of a U-shaped RF antenna directed to a center of the stage is set to a larger value than that of other U-shaped RF antennas while areas enclosed by conductors of the multiple U-shaped RF antennas are constant, the aspect ratio defined as a length of the RF antenna along a direction perpendicular to an inner wall divided by a length of the RF antenna along a direction parallel to the inner wall.
  • Inventor, and Inventor/Applicant
  • MIYAKE SHOJI
  • EBE AKINORI
  • SHOJI TATSUO
  • SETSUHARA YUICHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close