Top > Search of International Patents > METHOD FOR BONDING HARDENED SILICONE RESIN, METHOD FOR JOINING SUBSTRATE HAVING FINE STRUCTURE, AND METHOD FOR MANUFACTURING MICRO FLUID DEVICE USING THE METHOD FOR JOINING.

METHOD FOR BONDING HARDENED SILICONE RESIN, METHOD FOR JOINING SUBSTRATE HAVING FINE STRUCTURE, AND METHOD FOR MANUFACTURING MICRO FLUID DEVICE USING THE METHOD FOR JOINING. meetings

Foreign code F120006369
File No. S2011-0828-N0
Posted date Mar 27, 2012
Country WIPO
International application number 2011JP000245
International publication number WO 2011/089892
Date of international filing Jan 19, 2011
Date of international publication Jul 28, 2011
Priority data
  • P2010-165916 (Jul 23, 2010) JP
  • P2010-008956 (Jan 19, 2010) JP
Title METHOD FOR BONDING HARDENED SILICONE RESIN, METHOD FOR JOINING SUBSTRATE HAVING FINE STRUCTURE, AND METHOD FOR MANUFACTURING MICRO FLUID DEVICE USING THE METHOD FOR JOINING. meetings
Abstract Disclosed is a novel method for bonding hardened silicone resin. Further disclosed is a method for joining a cover substrate and a main substrate whereon a nano-size structure having recesses and projections is formed, without damaging said recessed and projected structure, and a method for manufacturing a micro fluid device which is provided with a nano flow channel using the joining method. The surface of a substrate made from hardened silicone resin is excited by means of atmospheric pressure plasma irradiation or vacuum ultraviolet light irradiation and then the surface of the hardened silicone resin substrate and a glass substrate or similar are overlayed and pushing pressure is applied, thus bonding both substrates without using heat or an adhesive. Also, by applying a silicone rubber composition to the joining surface of the cover substrate, then hardening the composition to form a silicone rubber layer, then adhering together the surface of the main substrate whereon a structure having recesses and projection is formed, and the silicone rubber layer on the cover substrate, and subsequently, with the substrates in this adhered state, irradiating ultraviolet rays from the main substrate side, a silicon oxide film is formed on the joining boundary thus both substrates are strongly adhered together.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • TOKYO INSTITUTE OF TECHNOLOGY
  • Inventor
  • YAMAMOTO, Takatoki
IPC(International Patent Classification)
Specified countries AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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