TOP > 外国特許検索 > DEVICE FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, METHOD FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, AND ALUMINUM NITRIDE CRYSTAL GRAINS

DEVICE FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, METHOD FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, AND ALUMINUM NITRIDE CRYSTAL GRAINS

外国特許コード F120006630
整理番号 S2010-0931
掲載日 2012年5月17日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2011JP065221
国際公開番号 WO 2012002545
国際出願日 平成23年7月1日(2011.7.1)
国際公開日 平成24年1月5日(2012.1.5)
優先権データ
  • 特願2010-152506 (2010.7.2) JP
発明の名称 (英語) DEVICE FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, METHOD FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, AND ALUMINUM NITRIDE CRYSTAL GRAINS
発明の概要(英語) Provided are aluminum nitride crystal grains in which each individual grain has a grain size of 0.05 µm to 1 µm and a shape selected from any of a hexagonal prism, a hexagonal drum shape, a hexagonal pyramid, or two hexagonal pyramids where the base surfaces thereof are joined together. A production device (1A) comprises: a first reaction chamber (7a) for generating aluminum chloride gas by reacting hydrogen chloride gas and aluminum heated to a temperature that is the melting point of the aluminum or lower; a second reaction chamber (2a) for growing aluminum nitride crystal grains by reacting ammonia gas and the aluminum chloride gas; a heater (3) for heating the first reaction chamber (7a) and the second reaction chamber (2a); and a shroud (9) for separating the ammonia gas and the aluminum chloride gas up to the second reaction chamber (2a). As a result, a device for producing aluminum nitride crystal grains can be provided with which aluminum nitride crystal grains that are single crystals can be efficiently produced.
従来技術、競合技術の概要(英語) BACKGROUND ART
Aluminum nitride crystal grains, the electronic device of the substrate and the high temperature, high corrosion resistance ceramics for structural material (for example AlN, such as SiAlON) used in the raw material. As a method of manufacturing an aluminum nitride crystal particles, is for example reducing nitriding method or combustion method. Is Patent Document 1, aluminum raw material that contains, in an atmosphere including nitrogen combustion synthesis by a method of producing the aluminum nitride-based fluorescent material disclosed. Is Patent Document 2, raw materials comprising the aluminum component, in an atmosphere containing nitrogen after the nitriding treatment, and by firing at temperatures in excess of 1050 °C aluminum nitride-based fluorescent material has been disclosed a method of producing. Non-patent document 1 is, as described for the synthesis of the aluminum nitride powder is. The non-patent document 2, aluminum nitride fluorescent material are described. Non-patent document 3, is 4, using aluminum chloride gas and ammonia is described for preparing a thin film of aluminum nitride.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
  • 発明者(英語)
  • HARA Kazuhiko
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PE PG PH PL PT RO RS RU SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ MD RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG
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