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PRECURSOR COMPOSITION AND METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM

Foreign code F120006668
File No. E086P23
Posted date May 23, 2012
Country WIPO
International application number 2011JP066165
International publication number WO 2012/008554
Date of international filing Jul 8, 2011
Date of international publication Jan 19, 2012
Priority data
  • P2010-159475 (Jul 14, 2010) JP
Title PRECURSOR COMPOSITION AND METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM
Abstract The present invention provides a precursor composition for forming a conductive oxide film which has high electrical conductivity and in which an amorphous structure can be maintained steadily even when the film is heated to a high temperature, in a simple liquid phase process. This precursor composition comprises: at least one compound selected from the group consisting of carboxylic acid salts, nitric acid salts and sulfuric acid salts of lanthanoid elements (excluding cerium), at least one compound selected from the group consisting of carboxylic acid salts, nitrosyl carboxylic acid salts, nitrosyl nitric acid salts and nitrosyl sulfuric acid salts of ruthenium, iridium and rhodium, and a solvent comprising at least one compound selected from the group consisting of carboxylic acids, alcohols and ketones.
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SHIMODA Tatsuya
  • LI Jinwang
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
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