OPTICAL INFORMATION ACQUIRING ELEMENT, OPTICAL INFORMATION ACQUIRING ELEMENT ARRAY, AND HYBRID SOLID-STATE IMAGE PICKUP DEVICE
外国特許コード | F120006701 |
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掲載日 | 2012年5月25日 |
出願国 | 世界知的所有権機関(WIPO) |
国際出願番号 | 2011JP052447 |
国際公開番号 | WO 2011/096549 |
国際出願日 | 平成23年2月4日(2011.2.4) |
国際公開日 | 平成23年8月11日(2011.8.11) |
優先権データ |
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発明の名称 (英語) | OPTICAL INFORMATION ACQUIRING ELEMENT, OPTICAL INFORMATION ACQUIRING ELEMENT ARRAY, AND HYBRID SOLID-STATE IMAGE PICKUP DEVICE |
発明の概要(英語) | Disclosed is an optical information acquiring element which is provided with: a p-type semiconductor layer (31); an n-type surface embedded region (33), which is embedded in the semiconductor layer (31) so as to configure a photodiode with the semiconductor layer (31); an n-type charge accumulating region (36), which is embedded in the surface embedded region (33), and which accumulates charges generated by the photodiode; a p-type barrier forming region, which is embedded in the surface embedded region (33), and which forms a potential barrier by sandwiching the surface embedded region (33) with the semiconductor layer (31); and an n-type charge discharging region (34), which is embedded in the semiconductor layer (31), and which stores and discharges excessive charges flowed out from the charge accumulating region (36) over the potential barrier. The optical information acquiring element transfers, at a high speed, electrons generated by light by receiving optical communication signals and taking out the change of the potential of the charge accumulating region (36) as signals. An optical information acquiring element array, and a hybrid solid-state image pickup device, which performs, at a high speed, image acquisition and information acquisition by means of optical communication, are also provided. |
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国際特許分類(IPC) | |
指定国 | AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM) |
日本語項目の表示
発明の名称 | 光情報取得素子、光情報取得素子アレイ及びハイブリッド型固体撮像装置 |
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発明の概要 | p型の半導体層(31)と、半導体層(31)とフォトダイオードを構成するように、半導体層(31)に埋め込まれたn型の表面埋込領域(33)と、表面埋込領域(33)に埋め込まれ、フォトダイオードが生成した電荷を蓄積するn型の電荷蓄積領域(36)と、表面埋込領域(33)に埋め込まれ、半導体層(31)と共に表面埋込領域(33)を挟むことにより電位障壁を形成するp型の障壁形成領域と、半導体層(31)に埋め込まれ、電位障壁を越えて電荷蓄積領域(36)から流出した過剰の電荷を収納し吐き出すn型の電荷吐出領域(34)とを備え、光通信信号を受信して、電荷蓄積領域(36)の電位の変化を信号として取り出すことにより、光が生成した電子を高速に転送する光情報取得素子、光情報取得素子アレイ、高速に画像取得と光通信による情報取得を行うハイブリッド型固体撮像装置を提供する。 |
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