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Plasma generation device, plasma control method, and substrate manufacturing method achieved

Foreign code F120006711
File No. V312P005KR1
Posted date May 28, 2012
Country Republic of Korea
Application number 20117019922
Gazette No. 20110106947
Gazette No. 101199994
Date of filing Dec 12, 2003
Gazette Date Sep 29, 2011
Gazette Date Nov 12, 2012
International application number JP2003016007
International publication number WO2004056159
Date of international filing Dec 12, 2003
Date of international publication Jul 1, 2004
Priority data
  • P2002-363988 (Dec 16, 2002) JP
  • P2002-363989 (Dec 16, 2002) JP
  • P2003-014718 (Jan 23, 2003) JP
Title Plasma generation device, plasma control method, and substrate manufacturing method achieved
Abstract The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance. <IMAGE>
(From EP1575343 A1)
Outline of related art and contending technology BACKGROUND ART
In recent years, amorphous silicon film (thin film transistor) - LCD TFT using an image having high brightness can be displayed than the polysilicon TFT field LCD is attracting attention. In polysilicon TFT field LCD, firstly, a poly silicon thin film on a glass substrate to form a substrate that includes polysilicon. A plurality of polysilicon on the substrate 2 is divided into a pixel region and arranged in two dimensions, each pixel region by forming a thin film transistor substrate for LCD (TFT) system according to the invention. The polysilicon of a large screen in order to produce TFT field LCD, high quality, high flatness in particular has become necessary to the silicon substrate.
The polysilicon substrate is a substrate for a high efficiency solar cells and also getting attention, along with the application demand and enlargement of the area () is required to have a ratio of the device and the semiconductor device. In addition, even for the general substrate for a semiconductor device, an area larger than the opening size of the single crystal at right angles, by the deposition of the substrate is not used and hence not preferable.
These fields are used in order to manufacture a substrate, using the plasma treatment is performed. Using the plasma treatment, the surface of the substrate and the substrate as a foundation for processing the raw material to be deposited, and, etching the substrate to be processed by surface treatment or the like are included. With increase in size of the substrate, and the size of an apparatus for performing plasma treatment needs to be, the largest problem at that time, the nonuniformity of the plasma treatment. In order to solve this problem, the surface of a substrate (whole surface) of the plasma density over the possible need to be made uniform. On the other hand, from the viewpoint of productivity, and increase the plasma density, thereby increasing the deposition rate or etching rate is required.
There are a method for generating the plasma, the plasma (electron cyclotron resonance; Electron Cyclotron Resonance) ECR, microwave plasma, inductively coupled plasma, capacitively coupled plasma method and the like. In this inductively coupled plasma method, the antenna high frequency voltage is applied to the induction coil, the inside of the plasma generating apparatus that generates electromagnetic field, thereby generating a plasma of the present invention. According to this structure, the plasma apparatus which is one of the condition required for a high density of plasma can be generated. On the other hand, since the plasma density depends on the distance from the antenna, the uniformity of the plasma density is another requirement for the shape or position of the antenna structure such as a steel ball is improved by the present invention can be realized. For example, Japanese Unexamined Patent Application Publication No. 2000-058297 (hereinafter, 'patent document 1' is assumed to be) includes, on the ceiling of the plasma generation chamber provided outside of the flat plate by introducing high frequency waves from the coil, thereby improving uniformity of plasma density is described.
With such a configuration of a substrate in the area to be reduced () if, on the ceiling of the plasma generation chamber for the purpose of ensuring the mechanical strength of the wall of the ceiling must be paid not sufficiently thick. However, patent document 1 in the apparatus of the plasma production chamber to the outside because the antenna is disposed, an induced electromagnetic field radiated from an antenna attenuates in the wall, the plasma generating chamber to obtain a sufficiently high strength of the electromagnetic induction is difficult. In other words, according to the method described in patent document 1, uniformity of plasma density will be constant but further improvement is observed, the plasma density is difficult to be sufficiently high.
On the other hand the inventors have found that Japanese Unexamined Patent Application Publication ('2 patent') No. 2001-035697 in, high frequency antenna may be mounted on the plasma generating chamber, install a plurality of antennas, and main circuit (circumference) of a shape that does not use the antenna proposed.
According to this configuration, the wall of the plasma generation chamber is not impaired, the attenuation of the electromagnetic field induced in the plasma generation chamber and not emitted, the plasma density can be made sufficiently high. In addition, a plurality of antennas disposed uniformly radiated electromagnetic field derived from it, its uniformity is improved, thereby improving uniformity of plasma density can be. Moreover, a large voltage is applied to the internal antenna is more likely to generate a discharge (abnormal), a plurality of antennas of the individual antenna by providing the inductance becomes small, abnormal discharge does not occur. Does not rotate the shape of the antenna to be used also, the inductance of the antenna is small contributes to suppression of the abnormal discharge. By these effects, a large area of the target substrate for deposition processing or etching processing is enabled. Hereinafter, described in patent document 2 has a plurality of antennas is provided a configuration in which the 'multi antenna scheme' is referred to.
A greater area in the future in order of processing a substrate, while ensuring sufficiently high strength of the plasma density, high uniformity of the plasma state than is required to generate. For this purpose, the multi antenna each method, the shape of the antenna or the antenna position and the like each b·s′ relation of a, presently considered a parameter that is not in need of review. In addition, the electromagnetic wave radiated from an antenna to induce a standing wave formed, such that the plasma uniformity is damaged. Moreover, the intensity of the electromagnetic induction as it depends on the distance from the high frequency antenna, multi antenna may still be used in such a manner, the plasma density near the center of the substrate outer periphery (outer border) of the substrate in the vicinity thereof becomes lower than that. When there is little substrate area near the center of the substrate and the substrate to the vicinity of the outer peripheral portion of the plasma density in an allowable range though the difference, if the difference is to increase the area of the substrate cannot be ignored will be described. In addition, the rate of etching or deposition and the like, ion species or radical species (species) since this example also, the ion species or radical species generated by kary needs to be taken into consideration.
Scope of claims [claim1]
1. (a) the vacuum container, (b) provided in said vacuum container, placing the substrate processing volume (to) to the substrate (substrate stage) and, (c) in said vacuum container, a substrate stage arranged in the two parallel X (an integer of 2 or more is X) of an inductively coupled high frequency antenna, and a, where each of the high frequency antenna X supplied to the antenna of the radio frequency power is shorter than a length of 1/4 wavelength of said conductor into the inside of the device.

[claim2]
2. Method according to claim 1, of the high frequency antenna X, two Y (integer of 2 or more is X Y) is connected in parallel with the high frequency antenna and a plate having a conductor (plate field shaped conductor) of the plasma generating apparatus.

[claim3]
3. Method according to claim 2, wherein the plate conductor, the high frequency power supply and the high frequency power from a feeding point, wherein each of the two high frequency antenna Y supplied radio frequency power corresponding to the distance between the feed point, all of the high frequency power is shorter than a length of 1/4 wavelength of the plasma generating apparatus.

[claim4]
4. Method according to claim 3, wherein in each of the high frequency antenna X, the length of the conductor of a high frequency antenna is the sum of the distance, the high frequency power is shorter than a length of 1/4 wavelength of the plasma generating apparatus.

[claim5]
5. Method according to claim 1, of the plurality of high frequency antenna 1 X or grouped into a plurality of high frequency antenna and, each group of high frequency power as supplied to the phase detector detects the phase of the high frequency power having a phase adjuster adjusting a phase of the plasma generating apparatus.

[claim6]
6. Method according to claim 1, each of the impedance device is the high frequency antenna X connected to said plasma generating device.

[claim7]
7. Method according to claim 1, wherein one of the high frequency antenna X, two Z (integer of 2 or more is X Z) of the high frequency antenna 1 the radio frequency power source being connected in parallel to the plasma generating apparatus.

[claim8]
8. Method according to claim 1, wherein each of the high frequency antenna X, 1 connected to two high frequency power source to the plasma generating apparatus.

[claim9]
9. Method according to claim 6, wherein the impedance element is a variable impedance value (change) of the plasma generating apparatus.

[claim10]
10. Method according to claim 9, wherein the impedance element is a variable inductance coil and the plasma generating apparatus.

[claim11]
11. Method according to claim 9, wherein each of the high frequency antenna X measuring voltage or current measuring section, the measuring unit measures a voltage or a current value obtained in said impedance value is set by a control unit to the plasma generating apparatus.

[claim12]
12. Method according to claim 11, wherein the measurement unit, the current flowing in the two high frequency antenna X caused by the sensed emf disposed within the range, the high frequency antenna current that is provided in a pickup coil for detecting the plasma generating apparatus.

[claim13]
13. Method according to claim 11, wherein the measurement unit, the two portions of each conductor of a high frequency antenna X connected in parallel, the voltage applied to its two high frequency antenna X detecting capacitor and the plasma generating apparatus.

[claim14]
14. Method according to claim 11, wherein the measurement unit, a high frequency current or voltage signal of the detected direct current or voltage signal to a bridge circuit provided with a detector or wherein the plasma generating apparatus.

[claim15]
15. Method according to claim 11, wherein the measurement unit, wherein the high frequency antenna current signal and two X voltage signal and a signal synthesizer for synthesizing, in the signal synthesizer that removes high frequency component of the synthesized signal to the low pass filter of the plasma generating apparatus.

[claim16]
16. 15 Apparatus according to any one of claims 1 wherein, the high frequency antenna comprises two X ceiling wall or side wall of the vacuum chamber are arranged on both sides of the plasma producing apparatus

[claim17]
17. 15 Apparatus according to any one of claims 1 wherein, the surface of the insulator for the high frequency antenna X coated with the plasma generating apparatus.

[claim18]
18. 15 Apparatus according to any one of claims 1 wherein, of the vacuum vessel of a high frequency antenna X in a planar shape of the plasma generating apparatus.

[claim19]
19. Claim 1 apparatus according to any one of claim 15, wherein the plurality of high frequency antenna 1 X or grouped into a plurality of high frequency antenna and, for each group of 1 wherein each high frequency power is supplied in parallel to the high frequency antenna and the plasma generating apparatus.

[claim20]
20. A vacuum chamber, the ceiling wall or side wall of the vacuum vessel from both sides, on a substrate stage placing the substrate to be processed are arranged parallel to each of a plurality of high frequency antenna of the inductively coupled plasma generating apparatus having the plasma control method, the plurality of the high frequency antenna in a plasma state by adjusting the length of the first and second control method.

[claim21]
21. Method according to claim 20, wherein the plurality of high frequency power supplied to each of the antenna by adjusting a phase difference control unit to a plasma state to the second control method.

[claim22]
22. Method according to claim 20, wherein each of the plurality of high impedance element is connected to the antenna, each impedance element of impedance values by adjusting the plasma density distribution in the vacuum chamber of the first and second control method.

[claim23]
23. Method according to claim 22, and an impedance value of the variable impedance element, the voltage of each of the plurality of the high frequency antenna, or both current measurements, the resulting voltage, current or impedance value by multiplying said control frequency power.

[claim24]
24. 15 Apparatus according to any one of claims 1 to 20 or claim a plasma producing apparatus according to claim 23 the control method according to any one of a plasma to generate raw, of a raw material of a plasma to deposit the product by the manufacturing method of the substrate.

[claim25]
25. 15 Apparatus according to any one of claims 1 to 20 or claim a plasma producing apparatus according to any one of claims 23 to a plasma control method using a plasma generated by the etching treatment of the second major surface.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MIYAKE SHOJI
  • EBE AKINORI
  • SHOJI TATSUO
  • SETSUHARA YUICHI
IPC(International Patent Classification)
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