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Plasma generation device, plasma control method, and substrate manufacturing method achieved

Foreign code F120006712
File No. V312P005KR2
Posted date May 28, 2012
Country Republic of Korea
Application number 20117019923
Gazette No. 20110106948
Gazette No. 101199995
Date of filing Dec 12, 2003
Gazette Date Sep 29, 2011
Gazette Date Nov 12, 2012
International application number JP2003016007
International publication number WO2004056159
Date of international filing Dec 12, 2003
Date of international publication Jul 1, 2004
Priority data
  • P2002-363988 (Dec 16, 2002) JP
  • P2002-363989 (Dec 16, 2002) JP
  • P2003-014718 (Jan 23, 2003) JP
Title Plasma generation device, plasma control method, and substrate manufacturing method achieved
Abstract The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance. <IMAGE>
(From EP1575343 A1)
Outline of related art and contending technology BACKGROUND ART
In recent years, amorphous silicon film (thin film transistor) - LCD TFT used to display an image having high brightness can be higher than the polysilicon TFT - LCD is attracting attention. In polysilicon TFT field LCD, firstly, a poly silicon thin film is formed on a glass substrate for the polysilicon substrate is manufactured. A plurality of polysilicon on the substrate 2 is divided into a pixel region and arranged in two dimensions, each pixel region by forming a thin film transistor substrate for LCD (TFT) system according to the invention. The polysilicon of a large screen in order to produce TFT field LCD, high quality, high flatness in particular has the silicon substrate is required.
The polysilicon substrate is a substrate for a high efficiency solar cells and also getting attention, along with the application demand and enlargement of the area () have been required to be and. In addition, even for the general substrate for a semiconductor device, an area larger than the opening size of the single crystal at right angles, by the deposition of the substrate is not used and hence not preferable.
These fields are used in order to manufacture a substrate, using the plasma treatment is performed. Using the plasma treatment, the surface of the substrate and the substrate as a foundation for depositing raw material processing, and, etching the substrate to be processed by surface treatment or the like are included. With increase in size of the substrate to, and the size of an apparatus for performing plasma treatment needs to be, the largest problem at that time, the nonuniformity of the plasma treatment according to the present invention. In order to solve this problem, the surface of a substrate (whole surface) plasma density over the possible need to be made uniform. On the other hand, from the viewpoint of productivity, and increase the plasma density, deposition rate or etching rate is increased thereby is required.
There are a method of generating the plasma, the plasma (electron cyclotron resonance; Electron Cyclotron Resonance) ECR, microwave plasma, inductively coupled plasma, capacitively coupled plasma method and the like. In this inductively coupled plasma method, the antenna high frequency voltage is applied to the induction coil, the inside of the plasma generating apparatus that generates electromagnetic field, thereby generating a plasma of the present invention. According to this structure, the plasma apparatus which is one of the condition required for a high density of plasma can be generated. On the other hand, since the plasma density depends on the distance from the antenna, said further requirement for uniformity in the plasma density of the structural shape or position of the antenna is improved by the twenty has been attempted. For example, Japanese Unexamined Patent Application Publication No. 2000-058297 (hereinafter, 'patent document 1' is assumed to be) includes, on the ceiling of the plasma generation chamber provided outside of the flat plate by introducing high frequency waves from the coil, to improve the uniformity of plasma density is described.
Such a configuration to reduce the area of the substrate () if the user wishes, the plasma generation chamber for the purpose of ensuring the mechanical strength of the ceiling wall of the ceiling must be paid not sufficiently thick. However, patent document 1 in the apparatus of the plasma generation chamber is arranged on the outside of the antenna and therefore, the induction electromagnetic field radiated from an antenna attenuates in the wall, the plasma generating chamber to obtain a sufficiently high strength of the electromagnetic induction is difficult. In other words, the method described in patent document 1 in, for uniformity in the plasma density constant but further improvement is observed, the plasma density is difficult to be sufficiently high.
On the other hand the inventors have found that Japanese Unexamined Patent Application Publication ('2 patent') No. 2001-035697 in, high frequency antenna may be mounted on the plasma generating chamber, install a plurality of antennas, and a shape that does not rotate (circumference) of the antenna proposed.
According to this configuration, the wall of the plasma generation chamber is not impaired, the attenuation of the electromagnetic field induced in the plasma generation chamber and not emitted, the plasma density can be made sufficiently high. In addition, a plurality of antennas disposed uniformly derived from the emitted electromagnetic field and therefore, its uniformity is improved, thereby improving the uniformity of plasma density can be improved. Moreover, a large voltage is applied to the internal antenna is more likely to generate a discharge (abnormal), a plurality of antennas of the individual antenna by providing the inductance becomes small, abnormal discharge does not occur. The shape of the main antenna is not used as it is, the inductance of the antenna is small contributes to suppression of the abnormal discharge. By these effects, a large area of the target substrate for deposition processing or etching processing is enabled. Hereinafter, patent document 2 described in a plurality of antenna configuration is provided in a 'multi antenna scheme' is referred to.
A greater area in the future in order of processing a substrate, while ensuring sufficiently high strength of the plasma density, high uniformity of the plasma state than is required to generate. For this purpose, also in a method wherein the multi antenna, each antenna or the antenna shape of the position relation of a b·s′, presently considered a parameter that is not in need of review. In addition, the electromagnetic wave radiated from an antenna to induce a standing wave formed, such that the plasma uniformity is damaged. Moreover, the strength of the electromagnetic induction as it depends on the distance from the high frequency antenna, multi antenna may still be used in such a manner, the plasma density near the center of the substrate outer periphery (outer border) of the substrate in the vicinity thereof becomes lower than that. When there is little substrate area near the center of the substrate to the vicinity of the outer peripheral portion and the substrate of the plasma density in an allowable range though the difference, if the difference is to increase the area of the substrate cannot be ignored that may be stored therein. In addition, the rate of etching or the like is deposited, ion species or radical species (species) since this example also, the ion species or radical species generated by kary needs to be taken into account.
Scope of claims [claim1]
1. (a) the vacuum container, (b) provided in said vacuum container, placing the substrate processing volume (to) to the substrate (substrate stage) and, (c) two X (3 is an integer greater than or X) of an inductively coupled high frequency antenna shaped U, one of both ends of the electrodes is disposed at the high frequency power source connected with ground and, wherein the substrate stage of the high frequency antenna X parallel to enclose the vacuum chamber are arranged in an inner wall surface of the vacuum container is disposed such that multiple antennas, one of the high frequency antenna X, disposed adjacent to the high frequency antenna, positioned adjacent to at least 1 pair of said electrode, connected to the high frequency power supply or with, wherein grounded or together with the plasma generating apparatus.

[claim2]
2. Method according to claim 1, wherein in all of the high frequency antenna X, wherein the high frequency antenna disposed adjacent to each other and the adjacent electrodes of a same polarity in the plasma generating apparatus.

[claim3]
3. Method according to claim 1, wherein each impedance element of the high frequency antenna X is connected to the plasma generating apparatus.

[claim4]
4. Method according to claim 1, wherein one of the high frequency antenna X, two Y (integer of 2 or more is X Y) of the high frequency power supply of the high frequency antenna 1 being connected in parallel with the plasma generating apparatus.

[claim5]
5. Method according to claim 1, wherein each of the high frequency antenna 1 X of the high frequency power source connected to the plasma generating apparatus.

[claim6]
6. Method according to claim 3, wherein said impedance element having an impedance value of the variable (change) of the plasma generating apparatus.

[claim7]
7. Method according to claim 6, wherein said impedance element is a variable inductance coil to the plasma generating apparatus.

[claim8]
8. Method according to claim 6, wherein the voltage or current of each of a high frequency antenna X for measuring unit, measuring the voltage or current obtained at said impedance value by the value of a control unit for setting said plasma generation apparatus.

[claim9]
9. Method according to claim 8, wherein the measurement unit, the high frequency antenna current flowing in the two X caused by the sensed emf disposed within the range, detecting the high frequency antenna current that is provided in a pickup coil and the plasma generating apparatus.

[claim10]
10. Method according to claim 8, wherein the measurement unit, wherein each conductor of the high frequency antenna portion X connected in parallel, the voltage applied to its two high frequency antenna X detecting capacitor to the plasma generating apparatus.

[claim11]
11. Method according to claim 8, wherein the measurement unit, for detecting high frequency current or voltage signal into a direct current or voltage signal bridge circuit provided with a light detector or said plasma generating apparatus.

[claim12]
12. Method according to claim 8, wherein the measurement unit, the high frequency antenna current of said signal X voltage signal synthesizer for synthesizing a signal, the signal synthesizer that removes high frequency component of the synthesized signal in which the low pass filter of the plasma generating apparatus.

[claim13]
13. 12 Apparatus according to any one of claims 1 wherein, the high frequency antenna comprises two X ceiling wall or side wall of the vacuum vessel being arranged on both sides of the plasma generating apparatus.

[claim14]
14. 12 Apparatus according to any one of claims 1 wherein, the surface of the insulator for the high frequency antenna X coated with the plasma generating apparatus.

[claim15]
15. Claim 1 apparatus according to any one of claim 12, wherein the vacuum vessel of the high frequency antenna X in the flat shape of the plasma generating apparatus.

[claim16]
16. Claim 1 apparatus according to any one of claim 12, wherein the high frequency antenna is two or a plurality of 1 X frequency antenna are divided into a plurality of characters and, for each group of 1 wherein each high frequency power supplied in parallel to the antenna and the plasma generating apparatus.

[claim17]
17. The vacuum container, installed in said vacuum container, placing the substrate processing volume (to) to the substrate with a (substrate stage), two X (3 is an integer greater than or X) an inductively coupled high frequency antenna of the shaped U, one of both ends of the electrodes of the high frequency power source connected with ground and the other of the, wherein the high frequency antenna of said substrate stage X parallel to said vacuum container to enclose the vacuum chamber are arranged on an inner wall surface that is disposed in the plasma generating apparatus having a multi antenna plasma control method, the plurality of radio frequency antenna, disposed adjacent to the high frequency antenna, positioned adjacent to at least 1 pair of said electrode, connected to said high frequency power source with either, or both grounded by, the plasma generator to control plasma density distribution in the plasma control method.

[claim18]
18. Method according to claim 17, in all of the plurality of the high frequency antenna, the high frequency antenna adjacent to each other in the same polarity and the adjacent electrodes to which high frequency power.

[claim19]
19. Method according to claim 17, wherein each of the plurality of high impedance element is connected to the antenna, each impedance element of impedance values by adjusting the plasma density distribution in the vacuum chamber of the plasma control method.

[claim20]
20. Method according to claim 19, and an impedance value of the variable impedance element, each of the high frequency antenna in the plurality of voltage, current or both is measured, the resulting voltage, current or impedance value of the product by the value of a control method for controlling a plasma.

[claim21]
21. 12 Apparatus according to any one of claims 1 to 17 or claim a plasma producing apparatus according to any one of claims 20 to a high frequency power to produce plasma of the raw and, if the starting material by plasma to deposit the product to the second major surface.

[claim22]
22. 12 Apparatus according to any one of claims 1 to 17 or claim a plasma producing apparatus according to any one of claims 20 to a plasma control method using a plasma generated by the etching treatment of the second major surface.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MIYAKE SHOJI
  • EBE AKINORI
  • SHOJI TATSUO
  • SETSUHARA YUICHI
IPC(International Patent Classification)
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