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Amorphous oxide and thin film transistor 実績あり

外国特許コード F120006715
整理番号 E06015US2-1
掲載日 2012年5月28日
出願国 アメリカ合衆国
出願番号 201113097572
公報番号 20110201162
公報番号 9947803
出願日 平成23年4月29日(2011.4.29)
公報発行日 平成23年8月18日(2011.8.18)
公報発行日 平成30年4月17日(2018.4.17)
国際出願番号 JP2005003273
国際公開番号 WO2005088726
国際出願日 平成17年2月28日(2005.2.28)
国際公開日 平成17年9月22日(2005.9.22)
優先権データ
  • 特願2004-071477 (2004.3.12) JP
  • 特願2004-325938 (2004.11.10) JP
  • 2005US-10592431 (2005.2.28) US
  • 2005WO-JP03273 (2005.2.28) WO
  • 2009US-12504158 (2009.7.16) US
発明の名称 (英語) Amorphous oxide and thin film transistor 実績あり
発明の概要(英語) (US9947803)
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide.
In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
特許請求の範囲(英語) [claim1]
1. A method of forming a field effect thin film transistor device which is used as a normally-OFF type, comprising: providing a drain electrode;
providing a source electrode;
sputter depositing a channel layer which is contacting with the drain electrode and the source electrode, the channel layer being comprised of a transparent and amorphous indium-gallium-zinc oxide film,
wherein the sputtering deposition is performed in an oxygen-partial-pressure-controlled atmosphere at room temperature without adding impurity ions to the channel layer to increase electrical resistance, and using a polycrystalline sinter represented by InGaO3(ZnO)m (wherein m is a natural number less than 6) as a target material,
whereby forming the channel layer in which an atomic ratio In:Ga:Zn is 1:1:m (wherein m is a natural number less than 6) having an electron carrier concentration less than 1016/cm3 determined by Hall-effect measurement and an electron mobility of 1 cm2/(V.sec) or more at room temperature;
providing a gate electrode; and
providing a gate insulating film positioned between the gate electrode and the channel.
[claim2]
2. The method of forming a field effect thin film transistor according to claim 1, wherein the substrate is one of a glass plate, a plastic plate or a plastic film.
[claim3]
3. The method of forming a field effect thin film transistor according to claim 1, further comprising a step of heating the indium-gallium-zinc oxide film in a reducing atmosphere to increase the electron carrier concentration after the film formation.
[claim4]
4. The method of forming a field effect thin film transistor according to claim 1, the transistor is a switching element of LCDs or organic EL displays.
  • 発明者/出願人(英語)
  • Hosono Hideo
  • Hirano Masahiro
  • Ota Hiromichi
  • Kamiya Toshio
  • Nomura Kenji
  • CANON
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • TOKYO INSTITUTE OF TECHNOLOGY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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