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Amorphous oxide and thin film transistor achieved

Foreign code F120006715
File No. E06015US2-1
Posted date May 28, 2012
Country United States of America
Application number 201113097572
Gazette No. 20110201162
Gazette No. 9947803
Date of filing Apr 29, 2011
Gazette Date Aug 18, 2011
Gazette Date Apr 17, 2018
International application number JP2005003273
International publication number WO2005088726
Date of international filing Feb 28, 2005
Date of international publication Sep 22, 2005
Priority data
  • P2004-071477 (Mar 12, 2004) JP
  • P2004-325938 (Nov 10, 2004) JP
  • 2005US-10592431 (Feb 28, 2005) US
  • 2005WO-JP03273 (Feb 28, 2005) WO
  • 2009US-12504158 (Jul 16, 2009) US
Title Amorphous oxide and thin film transistor achieved
Abstract (US9947803)
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide.
In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
Scope of claims [claim1]
1. A method of forming a field effect thin film transistor device which is used as a normally-OFF type, comprising: providing a drain electrode;
providing a source electrode;
sputter depositing a channel layer which is contacting with the drain electrode and the source electrode, the channel layer being comprised of a transparent and amorphous indium-gallium-zinc oxide film,
wherein the sputtering deposition is performed in an oxygen-partial-pressure-controlled atmosphere at room temperature without adding impurity ions to the channel layer to increase electrical resistance, and using a polycrystalline sinter represented by InGaO3(ZnO)m (wherein m is a natural number less than 6) as a target material,
whereby forming the channel layer in which an atomic ratio In:Ga:Zn is 1:1:m (wherein m is a natural number less than 6) having an electron carrier concentration less than 1016/cm3 determined by Hall-effect measurement and an electron mobility of 1 cm2/(V.sec) or more at room temperature;
providing a gate electrode; and
providing a gate insulating film positioned between the gate electrode and the channel.
[claim2]
2. The method of forming a field effect thin film transistor according to claim 1, wherein the substrate is one of a glass plate, a plastic plate or a plastic film.
[claim3]
3. The method of forming a field effect thin film transistor according to claim 1, further comprising a step of heating the indium-gallium-zinc oxide film in a reducing atmosphere to increase the electron carrier concentration after the film formation.
[claim4]
4. The method of forming a field effect thin film transistor according to claim 1, the transistor is a switching element of LCDs or organic EL displays.
  • Inventor, and Inventor/Applicant
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OTA HIROMICHI
  • KAMIYA TOSHIO
  • NOMURA KENJI
  • CANON
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • TOKYO INSTITUTE OF TECHNOLOGY
IPC(International Patent Classification)
U.S. Cl./(Sub)
  • C23C014/00F
  • C23C014/08L
  • C23C014/28
  • C23C014/34B2
  • H01L021/02K4C1C1
  • H01L021/02K4C1D
  • H01L021/02K4E3P
  • H01L027/12T4K
  • H01L029/786K2
  • H01L029/786K
  • H01L029/786S
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
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