Top > Search of International Patents > CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD

CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD

Foreign code F120006728
File No. E086P22WO
Posted date May 28, 2012
Country WIPO
International application number 2011JP071578
International publication number WO 2012/043363
Date of international filing Sep 22, 2011
Date of international publication Apr 5, 2012
Priority data
  • P2010-217084 (Sep 28, 2010) JP
Title CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD
Abstract Disclosed is a charged particle beam device capable of semiconductor film deposition that is high-speed compared to deposition using conventional silicon hydrides and halides as raw material gases. The disclosed charged particle beam device is provided with a charged particle source (1), a focusing lens electrode (2), a blanking electrode (3), a scanning electrode (4), a sample stage (10) for mounting a sample (9), a secondary charged particle detector (8) for detecting secondary charged particles (7) generated from the sample (9) by means of charged particle beam irradiation, a reservoir (14) for accommodating cyclopentasilane as the raw material gas, and a gas gun (11) for supplying the raw material gas to the sample (9).
  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • SII NANOTECHNOLOGY INC.
  • Japan Science and Technology Agency
  • JSR Corporation
  • Inventor
  • KOYAMA, Yoshihiro
  • YASAKA, Anto
  • SHIMODA, Tatsuya
  • MATSUKI, Yasuo
  • KAWAJIRI, Ryo
IPC(International Patent Classification)
Reference ( R and D project ) ERATO SHIMODA Nano-Liquid Process AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close