CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD
| Foreign code | F120006728 |
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| File No. | E086P22WO |
| Posted date | May 28, 2012 |
| Country | WIPO |
| International application number | 2011JP071578 |
| International publication number | WO 2012/043363 |
| Date of international filing | Sep 22, 2011 |
| Date of international publication | Apr 5, 2012 |
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| Title | CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD |
| Abstract | Disclosed is a charged particle beam device capable of semiconductor film deposition that is high-speed compared to deposition using conventional silicon hydrides and halides as raw material gases. The disclosed charged particle beam device is provided with a charged particle source (1), a focusing lens electrode (2), a blanking electrode (3), a scanning electrode (4), a sample stage (10) for mounting a sample (9), a secondary charged particle detector (8) for detecting secondary charged particles (7) generated from the sample (9) by means of charged particle beam irradiation, a reservoir (14) for accommodating cyclopentasilane as the raw material gas, and a gas gun (11) for supplying the raw material gas to the sample (9). |
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| IPC(International Patent Classification) | |
| Reference ( R and D project ) | ERATO SHIMODA Nano-Liquid Process AREA |
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