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Magnetic tunnel junction device

外国特許コード F120006903
整理番号 K02012US4
掲載日 2012年10月4日
出願国 アメリカ合衆国
出願番号 201213400340
公報番号 20120161262
公報番号 8405134
出願日 平成24年2月20日(2012.2.20)
公報発行日 平成24年6月28日(2012.6.28)
公報発行日 平成25年3月26日(2013.3.26)
国際出願番号 JP2005004720
国際公開番号 WO2005088745
国際出願日 平成17年3月10日(2005.3.10)
国際公開日 平成17年9月22日(2005.9.22)
優先権データ
  • 特願2004-071186 (2004.3.12) JP
  • 特願2004-313350 (2004.10.28) JP
  • 2005US-10591947 (2005.3.10) US
  • 2005WO-JP04720 (2005.3.10) WO
  • 2010US-12923643 (2010.9.30) US
発明の名称 (英語) Magnetic tunnel junction device
発明の概要(英語) (US8405134)
The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared.
An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum.
A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation.
A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature.
This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode).
The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
特許請求の範囲(英語) [claim1]
1. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising: a first ferromagnetic material layer deposited on a substrate;
a second ferromagnetic material layer; and
a tunnel barrier layer located between the first and second ferromagnetic material layers, and
wherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, and
at least said first ferromagnetic material layer is crystallized and comprises CoFeB alloy.
[claim2]
2. The magnetoresistive device according to claim 1, wherein said second ferromagnetic material layer is also crystallized and comprises CoFeB alloy.
[claim3]
3. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising: a first ferromagnetic material layer deposited on a substrate;
a second ferromagnetic material layer; and
a tunnel barrier layer located between the first and second ferromagnetic material layers, and
wherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, and
wherein at least said first ferromagnetic material layer is entirely crystallized and comprises CoFeB alloy.
[claim4]
4. The magnetoresistive device according to claim 3, wherein said second ferromagnetic material layer is also entirely crystallized and comprises CoFeB alloy.
  • 発明者/出願人(英語)
  • YUASA SHINJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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