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Magnetic tunnel junction device

Foreign code F120006903
File No. K02012US4
Posted date Oct 4, 2012
Country United States of America
Application number 201213400340
Gazette No. 20120161262
Gazette No. 8405134
Date of filing Feb 20, 2012
Gazette Date Jun 28, 2012
Gazette Date Mar 26, 2013
International application number JP2005004720
International publication number WO2005088745
Date of international filing Mar 10, 2005
Date of international publication Sep 22, 2005
Priority data
  • P2004-071186 (Mar 12, 2004) JP
  • P2004-313350 (Oct 28, 2004) JP
  • 2005US-10591947 (Mar 10, 2005) US
  • 2005WO-JP04720 (Mar 10, 2005) WO
  • 2010US-12923643 (Sep 30, 2010) US
Title Magnetic tunnel junction device
Abstract (US8405134)
The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared.
An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum.
A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation.
A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature.
This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode).
The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
Scope of claims [claim1]
1. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising: a first ferromagnetic material layer deposited on a substrate;
a second ferromagnetic material layer; and
a tunnel barrier layer located between the first and second ferromagnetic material layers, and
wherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, and
at least said first ferromagnetic material layer is crystallized and comprises CoFeB alloy.
[claim2]
2. The magnetoresistive device according to claim 1, wherein said second ferromagnetic material layer is also crystallized and comprises CoFeB alloy.
[claim3]
3. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising: a first ferromagnetic material layer deposited on a substrate;
a second ferromagnetic material layer; and
a tunnel barrier layer located between the first and second ferromagnetic material layers, and
wherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, and
wherein at least said first ferromagnetic material layer is entirely crystallized and comprises CoFeB alloy.
[claim4]
4. The magnetoresistive device according to claim 3, wherein said second ferromagnetic material layer is also entirely crystallized and comprises CoFeB alloy.
  • Inventor, and Inventor/Applicant
  • YUASA SHINJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
IPC(International Patent Classification)
Reference ( R and D project ) PRESTO Nanostructure and Material Property AREA
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