SiC SEMICONDUCTOR ELEMENT
| 外国特許コード | F120006971 |
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| 整理番号 | S2010-0968-C0 |
| 掲載日 | 2012年10月29日 |
| 出願国 | 世界知的所有権機関（ＷＩＰＯ） |
| 国際出願番号 | 2011JP004578 |
| 国際公開番号 | WO 2012/026089 |
| 国際出願日 | 平成23年8月12日(2011.8.12) |
| 国際公開日 | 平成24年3月1日(2012.3.1) |
| 優先権データ |
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| 発明の名称 （英語） | SiC SEMICONDUCTOR ELEMENT |
| 発明の概要（英語） |
The invention provides an SiC semiconductor element having fewer interface defects at the interface between the SiC and the insulating film of the SiC semiconductor, as well as improved channel mobility. The semiconductor element is provided with at least an SiC semiconductor substrate and an insulating film in contact with the substrate, wherein the insulating film is formed on a specific crystal plane of the SiC semiconductor substrate, the specific crystal plane being a plane having an off-angle of 10-20 DEG relative to the {11-20} plane toward the [000-1] direction or at an off-angle of 70-80 DEG relative to the (000-1) plane toward the <11-20> direction. Through the use of a specific crystal plane unknown in the prior art, interface defects between the SiC semiconductor substrate and the insulating film can be reduced, and channel mobility of the semiconductor element can be improved. Devices formed with a trench (30) having various crystal planes in the side walls were fabricated, and drain current and channel mobility were measured. |
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| 国際特許分類(IPC) |
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日本語項目の表示
| 発明の名称 | SiC半導体素子 |
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『 SiC SEMICONDUCTOR ELEMENT 』に関するお問合せ
- 国立大学法人奈良先端科学技術大学院大学 研究協力課研究推進係
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